caa a22 4500 445827343 CHVBK 20180317145303.0 cr unu---uuuuu 170323e20110701xx s 000 0 eng 10.1007/s10854-010-0229-1 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0229-1 Dielectric and piezoelectric properties of BiMnO3 doped 0.95Na0.5K0.5NbO3-0.05LiSbO3 ceramics [Elektronische Daten] [Minhong Jiang, Xinyu Liu, Guohua Chen, Jun Cheng] The piezoelectric properties of (1−x)(0.95K0.5Na0.5NbO3-0.05LiSbO3)-x BiMnO3 (x=0, 0.002, 0.004, 0.006, 0.008, 0.01) lead-free piezoelectric ceramics were investigated as a function of x. These ceramics were fabricated by conventional ceramics sintering processing. BiMnO3 (BM)-doping was found to increase the Curie temperature, T c, from 370°C at x=0-380°C at x=0.002, and clearly increase the d 33, Q m and k p values, showing "hard” characteristic. The good piezoelectric and electromechanical properties of d 33=226pC/N, k p=40.8%, tan θ=2.60% and T c=370°C appear at x=0.004. Springer Science+Business Media, LLC, 2010 Jiang Minhong Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, 541004, Guilin, China aut Liu Xinyu Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, 541004, Guilin, China aut Chen Guohua Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, 541004, Guilin, China aut Cheng Jun Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, 541004, Guilin, China aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/7(2011-07-01), 876-881 0957-4522 22:7<876 2011 22 10854 https://doi.org/10.1007/s10854-010-0229-1 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0229-1 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Jiang Minhong Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, 541004, Guilin, China aut NATIONALLICENCE 700 1- Liu Xinyu Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, 541004, Guilin, China aut NATIONALLICENCE 700 1- Chen Guohua Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, 541004, Guilin, China aut NATIONALLICENCE 700 1- Cheng Jun Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, 541004, Guilin, China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/7(2011-07-01), 876-881 0957-4522 22:7<876 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer