caa a22 4500 445827378 CHVBK 20180317145303.0 cr unu---uuuuu 170323e20110701xx s 000 0 eng 10.1007/s10854-010-0210-z doi (NATIONALLICENCE)springer-10.1007/s10854-010-0210-z Structure, microwave dielectric and optical properties of Ln2/3Gd1/3TiNbO6 (Ln=Ce, Pr, Nd and Sm) ceramics [Elektronische Daten] [Annamma John, Shyla Joseph, K. Manu, J. Thomas, Sam Solomon] The Ln2/3Gd1/3TiNbO6 ceramic compositions are prepared through the solid state ceramic route. The compositions are calcined at 1250°C and sintered in the range 1350-1435°C. Structural analysis of the materials is done using X-ray diffraction analysis and vibrational spectroscopy. Surface morphology is examined by Scanning Electron Microscopy. Microwave dielectric properties such as dielectric constant (εr), quality factor (Q) and temperature coefficient of resonant frequency (Tf) are measured using cavity resonator method. The compositions have εr in between 46 and 41.8 and Tf in between +52 and +25ppm/°C. By the substitution of Gd, the Tf is reduced considerably with a slight decrease in dielectric constant. Cerium based composition had additional reflections other than that of aeschynite structure. For Pr, Nd and Sm based systems, solid solutions were formed. UV visible spectrum of the representative composition is recorded and the band gap energy is estimated. Photoluminescence spectra of the samples are recorded and the transitions causing emissions are identified. The materials are suitable for microwave and optoelectronic applications. Springer Science+Business Media, LLC, 2010 John Annamma Department of physics, St. John's College, 691306, Anchal, Kerala, India aut Joseph Shyla Department of physics, St. John's College, 691306, Anchal, Kerala, India aut Manu K. Fine ceramics materials and minerals Division, NIIST, 695019, Thiruvananthapuram, Kerala, India aut Thomas J. Departmentof Physics, Mar Ivanios College, 695015, Thiruvananthapuram, Kerala, India aut Solomon Sam Department of physics, St. John's College, 691306, Anchal, Kerala, India aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/7(2011-07-01), 776-780 0957-4522 22:7<776 2011 22 10854 https://doi.org/10.1007/s10854-010-0210-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0210-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- John Annamma Department of physics, St. John's College, 691306, Anchal, Kerala, India aut NATIONALLICENCE 700 1- Joseph Shyla Department of physics, St. John's College, 691306, Anchal, Kerala, India aut NATIONALLICENCE 700 1- Manu K. Fine ceramics materials and minerals Division, NIIST, 695019, Thiruvananthapuram, Kerala, India aut NATIONALLICENCE 700 1- Thomas J. Departmentof Physics, Mar Ivanios College, 695015, Thiruvananthapuram, Kerala, India aut NATIONALLICENCE 700 1- Solomon Sam Department of physics, St. John's College, 691306, Anchal, Kerala, India aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/7(2011-07-01), 776-780 0957-4522 22:7<776 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer