caa a22 4500 445827386 CHVBK 20180317145303.0 cr unu---uuuuu 170323e20110701xx s 000 0 eng 10.1007/s10854-010-0219-3 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0219-3 Preparation and structural characterization of Zn1−xMnxSe thin films [Elektronische Daten] [I. El Zawawi, K. Sedeek, A. Adam, Manal Mahdy] Undoped and Mn doped ZnSe nanoparticles thin films of thickness ranging from 20 to 120nm have been successfully synthesized via inert gas condensation (IGC) technique with constant Argon gas flow rate and deposition temperature 300K. The energy dispersive X-ray analysis (EDX) for freshly deposited Zn1−xMnxSe thin films were carried out and revealed that Mn contents (x) were 0, 0.05, 0.16 and 0.25. The as-prepared deposited thin films of different thickness were examined using transmission electron microscope (TEM) and showed that all films were nanocrystalline with particle size ranging from 4.1 to 6.6nm. The grazing incident in-plane X-ray diffraction (GIIXD) patterns verified nanocrystalline single phase zinc blende structure for 80nm film thickness for all examined Zn1−xMnxSe compound films. A broadening of main characteristic lines (111), (220) and (311) of cubic phase was observed and was attributed to the lower particle size in nanocrystalline examined Zn1−xMnxSe compound films. Springer Science+Business Media, LLC, 2010 El Zawawi I. Solid State Physics Department, National Research Center, 12622, Dokki, Cairo, Egypt aut Sedeek K. Physics Department, Faculty of Science (Girls), Al-Azhar University, Cairo, Egypt aut Adam A. Physics Department, Faculty of Science (Girls), Al-Azhar University, Cairo, Egypt aut Mahdy Manal Solid State Physics Department, National Research Center, 12622, Dokki, Cairo, Egypt aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/7(2011-07-01), 825-832 0957-4522 22:7<825 2011 22 10854 https://doi.org/10.1007/s10854-010-0219-3 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0219-3 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- El Zawawi I. Solid State Physics Department, National Research Center, 12622, Dokki, Cairo, Egypt aut NATIONALLICENCE 700 1- Sedeek K. Physics Department, Faculty of Science (Girls), Al-Azhar University, Cairo, Egypt aut NATIONALLICENCE 700 1- Adam A. Physics Department, Faculty of Science (Girls), Al-Azhar University, Cairo, Egypt aut NATIONALLICENCE 700 1- Mahdy Manal Solid State Physics Department, National Research Center, 12622, Dokki, Cairo, Egypt aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/7(2011-07-01), 825-832 0957-4522 22:7<825 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer