caa a22 4500 445827394 CHVBK 20180317145303.0 cr unu---uuuuu 170323e20110701xx s 000 0 eng 10.1007/s10854-010-0230-8 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0230-8 Study of the effect of thermal annealing on high k hafnium oxide thin film structure and electrical properties of MOS and MIM devices [Elektronische Daten] [A. Srivastava, R. Nahar, C. Sarkar] The effect of rapid thermal annealing on structural and electrical properties of high k HfO2 thin films is investigated. The films were initially deposited at pre-optimized sputtering voltage of 0.8kV and substrate bias of 80V in order to get optimized results for oxide charges and leakage current as a MOS device. The film properties were investigated for optimum annealing temperature in oxygen and optimum rapid thermal annealing temperature in nitrogen respectively to get the best electrical results as a MOS device structure. The film thickness, composition and microstructure is studied by Laser Ellipsometry, XRD and AFM and the effect of thermal annealing is shown. The electrical I-V and C-V characteristics of the annealed dielectric film were investigated employing Al-HfO2-Si MOS capacitor structure. The flat-band voltage (V fb) and oxide-charge density (Q ox) were extracted from the high-frequency C-V curve. Dielectric study were further carried out on HfO2 thin films having metal-insulator-metal (MIM) configuration over a wide temperature (300-500K) and frequency (100Hz to 1MHz) range. Springer Science+Business Media, LLC, 2010 Srivastava A. Electronics and Communication Engineering, Indian Institute for Information Technology Design and Manufacturing, PDPM-IIITD&M Jabalpur, 482005, Jabalpur, Madhya Pradesh, India aut Nahar R. Sensors and Nanotechnology Group, Central Electronics Engineering Research Institute (CSIR, New Delhi), 333031, Pilani, Rajasthan, India aut Sarkar C. Department of Electronics & Telecommunication Engineering, Jadavpur University, Kolkata, India aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/7(2011-07-01), 882-889 0957-4522 22:7<882 2011 22 10854 https://doi.org/10.1007/s10854-010-0230-8 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0230-8 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Srivastava A. Electronics and Communication Engineering, Indian Institute for Information Technology Design and Manufacturing, PDPM-IIITD&M Jabalpur, 482005, Jabalpur, Madhya Pradesh, India aut NATIONALLICENCE 700 1- Nahar R. Sensors and Nanotechnology Group, Central Electronics Engineering Research Institute (CSIR, New Delhi), 333031, Pilani, Rajasthan, India aut NATIONALLICENCE 700 1- Sarkar C. Department of Electronics & Telecommunication Engineering, Jadavpur University, Kolkata, India aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/7(2011-07-01), 882-889 0957-4522 22:7<882 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer