caa a22 4500 445827424 CHVBK 20180317145303.0 cr unu---uuuuu 170323e20110701xx s 000 0 eng 10.1007/s10854-010-0217-5 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0217-5 Photoconductivity and diode effect in Bi rich multiferroic BiFeO3 thin films grown by pulsed-laser deposition [Elektronische Daten] [K. Ahadi, S. Mahdavi, A. Nemati, M. Kianinia] Bismuth ferrite, BiFeO3, is almost the only material that is simultaneously magnetic and a strong ferroelectric at room temperature. As a result it is the most investigated multiferroic material. In this study, bismuth ferrite thin films were deposited on silicon wafer (100) and glass by pulsed-laser deposition and their structural, optical, and electrical properties were measured. Our study indicates that Bi richness in these films can stimulate formation of oxygen vacancy in the system which in its turn leads to delocalization of carriers and a more intensified photoconductivity response. X-ray diffraction analysis revealed formation of BiFeO3 (BFO), but it also showed formation of Bi2O3 and Bi2O2.3 as well as BFO. Energy dispersive spectrum (EDS) also showed higher atomic concentration of Bi with respect to Fe. It also disclosed Bi depletion through the films during post-growth heat treatment. Atomic force microscopy showed a homogeneous nano structure with columnar grains. It also disclosed that higher substrate temperature can improve smoothness of the films. Scanning electron microscopy depicted the thickness of about 200nm. Transmission spectrum illustrated band gap of about 2eV. Dark-light IV characteristics were conducted on the films which were subjected to post-growth heat treatment at 0.01 and 760Torr O2. Dark conductivities increased by an order of magnitude in comparison between films which were subjected to post-growth heat treatment at 0.01 and 760Torr O2. Dark-light IV characteristics of the films also uncovered a remarkable increase in conductivity under illumination in comparison to dark one. Diode behavior of the films was investigated by IV characteristics as well. Springer Science+Business Media, LLC, 2010 Ahadi K. Department of Materials Science and Engineering, Sharif University of Technology, Azadi Ave., P.O. Box 11155-9466, Tehran, Iran aut Mahdavi S. Physics Department, Sharif University of Technology, Azadi Ave., P.O. Box 11365-9466, Tehran, Iran aut Nemati A. Department of Materials Science and Engineering, Sharif University of Technology, Azadi Ave., P.O. Box 11155-9466, Tehran, Iran aut Kianinia M. Department of Materials Science and Engineering, Sharif University of Technology, Azadi Ave., P.O. Box 11155-9466, Tehran, Iran aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/7(2011-07-01), 815-820 0957-4522 22:7<815 2011 22 10854 https://doi.org/10.1007/s10854-010-0217-5 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0217-5 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Ahadi K. Department of Materials Science and Engineering, Sharif University of Technology, Azadi Ave., P.O. Box 11155-9466, Tehran, Iran aut NATIONALLICENCE 700 1- Mahdavi S. Physics Department, Sharif University of Technology, Azadi Ave., P.O. Box 11365-9466, Tehran, Iran aut NATIONALLICENCE 700 1- Nemati A. Department of Materials Science and Engineering, Sharif University of Technology, Azadi Ave., P.O. Box 11155-9466, Tehran, Iran aut NATIONALLICENCE 700 1- Kianinia M. Department of Materials Science and Engineering, Sharif University of Technology, Azadi Ave., P.O. Box 11155-9466, Tehran, Iran aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/7(2011-07-01), 815-820 0957-4522 22:7<815 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer