caa a22 4500 445827467 CHVBK 20180317145303.0 cr unu---uuuuu 170323e20110701xx s 000 0 eng 10.1007/s10854-010-0206-8 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0206-8 Synthesis, structural and optical characterization of Ni-doped ZnO nanoparticles [Elektronische Daten] [R. Elilarassi, G. Chandrasekaran] Nanocrystalline Zn1−x NixO (x=0.00, 0.02, 0.04, 0.06, 0.08) powders were synthesized by a simple sol-gel autocombustion method using metal nitrates of zinc, nickel and glycine. Structural and optical properties of the Ni-doped ZnO samples annealed at 800°C are characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive analysis using X-rays (EDAX), UV-visible spectroscopy and photoluminescence (PL). X-ray diffraction analysis reveals that the Ni-doped ZnO crystallizes in a hexagonal wurtzite structure and secondary phase (NiO) was observed with the sensitivity of XRD measurement with the increasing nickel concentration (x≥0.04). The lattice constants of Ni-doped ZnO nanoparticles increase slightly when Ni2+ is doped into ZnO lattice. The optical absorption band edge of the nickel doped samples was observed above 387nm (3.20eV) along with well-defined absorbance peaks at around 439 (2.82eV), 615(2.01eV) and 655nm (1.89eV). PL measurements of Ni-doped samples illustrated the strong UV emission band at ~3.02eV, weak blue emission bands at 2.82 and 2.75eV, and a strong green emission band at 2.26eV. The observed red shift in the band gap from UV-visible analysis and near band edge UV emission with Ni doping may be considered to be related to the incorporation of Ni ions into the Zn site of the ZnO lattice. Springer Science+Business Media, LLC, 2010 Elilarassi R. Department of Physics, Magnetsim and Magnetic Materials Lab, School of Physical, Chemical and Applied Sciences, Pondicherry University, 605 014, Puducherry, India aut Chandrasekaran G. Department of Physics, Magnetsim and Magnetic Materials Lab, School of Physical, Chemical and Applied Sciences, Pondicherry University, 605 014, Puducherry, India aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/7(2011-07-01), 751-756 0957-4522 22:7<751 2011 22 10854 https://doi.org/10.1007/s10854-010-0206-8 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0206-8 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Elilarassi R. Department of Physics, Magnetsim and Magnetic Materials Lab, School of Physical, Chemical and Applied Sciences, Pondicherry University, 605 014, Puducherry, India aut NATIONALLICENCE 700 1- Chandrasekaran G. Department of Physics, Magnetsim and Magnetic Materials Lab, School of Physical, Chemical and Applied Sciences, Pondicherry University, 605 014, Puducherry, India aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/7(2011-07-01), 751-756 0957-4522 22:7<751 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer