caa a22 4500 445827475 CHVBK 20180317145303.0 cr unu---uuuuu 170323e20110701xx s 000 0 eng 10.1007/s10854-010-0225-5 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0225-5 Electrical, structural and morphological characteristics of rapidly annealed Pd/n-InP (100) Schottky structure [Elektronische Daten] [A. Ashok Kumar, V. Janardhanam, V. Rajagopal Reddy] The electrical and structural properties of the Pd/InP (100) Schottky barrier diodes have been investigated as a function of annealing temperature by current-voltage (I-V), capacitance-voltage (C-V) and X-ray diffraction (XRD) measurements. The Schottky barrier height of the as-deposited, 100 and 200°C annealed contacts determined from the I-V and C-V measurements are 0.56 and 0.81eV, 0.57 and 0.81eV, and 0.58 and 0.82eV, respectively. However, both the measurements showed that the Schottky barrier height of the Pd/n-InP Schottky contact is increased to 0.59eV (I-V) and 0.83eV (C-V) when the contact is annealed at 300°C for 1min in nitrogen atmosphere. Further Schottky barrier height decreases to 0.57eV (I-V), 0.71eV (C-V) and 0.53eV (I-V), 0.67eV (C-V) after annealing at 400 and 500°C samples. The result shows that the optimum annealing temperature for the Pd/InP Schottky diode is 300°C. Norde method is also used to determine the barrier height of Pd Schottky contacts and the values are 0.56eV for the as-deposited contact, 0.57, 0.57, 0.58, 0.57 and 0.54eV for contacts annealed at 100, 200, 300, 400 and 500°C which are consistent with the values obtained by the I-V measurements. From the atomic force microscopy results, it is evident that the overall surface morphology of the Pd/InP Schottky diode is fairly smooth. Based on the XRD results, the formation of phosphorus-oxygen compounds at the interface may be responsible for the variation in barrier heights observed in Pd/InP Schottky contacts with annealing temperature. Springer Science+Business Media, LLC, 2010 Ashok Kumar A. Department of Physics, Y S R Engineering College of Yogi Vemana University, 516360, Proddatur, India aut Janardhanam V. Department of Physics, Sri Venkateswara University, 517 502, Tirupati, India aut Rajagopal Reddy V. Department of Physics, Sri Venkateswara University, 517 502, Tirupati, India aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/7(2011-07-01), 854-861 0957-4522 22:7<854 2011 22 10854 https://doi.org/10.1007/s10854-010-0225-5 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0225-5 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Ashok Kumar A. Department of Physics, Y S R Engineering College of Yogi Vemana University, 516360, Proddatur, India aut NATIONALLICENCE 700 1- Janardhanam V. Department of Physics, Sri Venkateswara University, 517 502, Tirupati, India aut NATIONALLICENCE 700 1- Rajagopal Reddy V. Department of Physics, Sri Venkateswara University, 517 502, Tirupati, India aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/7(2011-07-01), 854-861 0957-4522 22:7<854 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer