caa a22 4500 445827491 CHVBK 20180317145303.0 cr unu---uuuuu 170323e20110701xx s 000 0 eng 10.1007/s10854-010-0212-x doi (NATIONALLICENCE)springer-10.1007/s10854-010-0212-x Photoluminescence studies on ZnSe1− x Te x films [Elektronische Daten] [K. Vijayakumar, V. Vidhya, K. Murali, L. Amalraj, M. Jayachandran] ZnSe1−x Tex films were deposited by the electron beam evaporation technique at a substrate temperature of 300°C on glass and ITO coated GaAs substrates. The films exhibited cubic structure. Photoluminescence (PL) was studied at room temperature using an excitation wavelength of 320nm. The films deposited on glass substrates exhibited band edge luminescence and self activated luminescence bands at 2.69 and 2.39eV respectively. Atomic force microscopic studies indicated that the grain size increased with increase of Te content in the ternary. PL studies on the ZnSe1−x Tex/GaAs/ITO strucrure was made with an excitation of 265nm. The films exhibited band edge emission at 2.33eV which confirms the incorporation of Te in ZnSe. Another peak ar 2.56eV was also observed. Springer Science+Business Media, LLC, 2010 Vijayakumar K. Department of Physics, K.L.N.College of Information Technology, 630611, Madurai, India aut Vidhya V. Electrochemical Materials Science Division, Central Electrochemical Research Institute, 630006, Karaikudi, India aut Murali K. Electrochemical Materials Science Division, Central Electrochemical Research Institute, 630006, Karaikudi, India aut Amalraj L. Department of Physics, VHNSN College, 626001, Virudhunagar, India aut Jayachandran M. Electrochemical Materials Science Division, Central Electrochemical Research Institute, 630006, Karaikudi, India aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/7(2011-07-01), 785-789 0957-4522 22:7<785 2011 22 10854 https://doi.org/10.1007/s10854-010-0212-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0212-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Vijayakumar K. Department of Physics, K.L.N.College of Information Technology, 630611, Madurai, India aut NATIONALLICENCE 700 1- Vidhya V. Electrochemical Materials Science Division, Central Electrochemical Research Institute, 630006, Karaikudi, India aut NATIONALLICENCE 700 1- Murali K. Electrochemical Materials Science Division, Central Electrochemical Research Institute, 630006, Karaikudi, India aut NATIONALLICENCE 700 1- Amalraj L. Department of Physics, VHNSN College, 626001, Virudhunagar, India aut NATIONALLICENCE 700 1- Jayachandran M. Electrochemical Materials Science Division, Central Electrochemical Research Institute, 630006, Karaikudi, India aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/7(2011-07-01), 785-789 0957-4522 22:7<785 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer