caa a22 4500 44582753X CHVBK 20180317145303.0 cr unu---uuuuu 170323e20111201xx s 000 0 eng 10.1007/s10854-011-0368-z doi (NATIONALLICENCE)springer-10.1007/s10854-011-0368-z Effects of post-deposition annealing temperature and ambient on RF magnetron sputtered Sm2O3 gate on n-type silicon substrate [Elektronische Daten] [Wen Chin, Kuan Cheong] Samarium oxide (Sm2O3) thin films with thicknesses in the range of 15-30nm are deposited on n-type silicon (100) substrate via radio frequency magnetron sputtering. Effects of post-deposition annealing ambient [argon and forming gas (FG) (90% N2+10% H2)] and temperatures (500, 600, 700, and 800°C) on the structural and electrical properties of deposited films are investigated and reported. X-ray diffraction revealed that all of the annealed samples possessed polycrystalline structure with C-type cubic phase. Atomic force microscope results indicated root-mean-square surface roughness of the oxide film being annealed in argon ambient are lower than that of FG annealed samples, but they are comparable at the annealing temperature of 700°C (Argon—0.378nm, FG—0.395nm). High frequency capacitance-voltage measurements are carried out to determine effective oxide charge, dielectric constant and semiconductor-oxide interface trap density of the annealed oxide films. Sm2O3 thin films annealed in FG have smaller amount of effective oxide charge and semiconductor-oxide interface trap density than those oxide films annealed in argon. Current-voltage measurements are conducted to obtain barrier heights of the annealed oxide films during Fowler-Nordheim tunneling. Springer Science+Business Media, LLC, 2011 Chin Wen Energy Efficient and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, 14300, Nibong Tebal, Pulau Pinang, Malaysia aut Cheong Kuan Energy Efficient and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, 14300, Nibong Tebal, Pulau Pinang, Malaysia aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/12(2011-12-01), 1816-1826 0957-4522 22:12<1816 2011 22 10854 https://doi.org/10.1007/s10854-011-0368-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-011-0368-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Chin Wen Energy Efficient and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, 14300, Nibong Tebal, Pulau Pinang, Malaysia aut NATIONALLICENCE 700 1- Cheong Kuan Energy Efficient and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, 14300, Nibong Tebal, Pulau Pinang, Malaysia aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/12(2011-12-01), 1816-1826 0957-4522 22:12<1816 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer