caa a22 4500 445827548 CHVBK 20180317145303.0 cr unu---uuuuu 170323e20111201xx s 000 0 eng 10.1007/s10854-011-0370-5 doi (NATIONALLICENCE)springer-10.1007/s10854-011-0370-5 Influence of reaction time on growth of GaN nanowires fabricated by CVD method [Elektronische Daten] [Feng Shi, Chengshan Xue] GaN nanowires have been fabricated successfully on Si (111) substrates coated with NiCl2 thin films by chemical vapor deposition method using Ga2O3 as raw material. The growth of GaN nanowires was investigated as a function of reaction times so as to study the influence of different durations on the components, microstructure, morphologies and optical properties of GaN samples in particular by X-ray diffraction, FT-IR spectrophotometer, scanning electron microscope, and photoluminescence. The results show that the samples after reaction are single crystal GaN with hexagonal wurtzite structure and high-quality crystalline after reaction at 1,100°C for 60min, which have good optical properties as revealed by PL spectra. Reaction time greatly influences the growth of GaN nanowires, that is, with the increase in reaction time, the crystalline quality of GaN nanowires is improved accordingly. The growth of the GaN nanowires follows the vapor-liquid-solid mechanism and Ni plays an important role as catalyst, which forms nucleation point in the growth of GaN nanowires. Springer Science+Business Media, LLC, 2011 Shi Feng College of Physics and Electronics, Shandong Normal University, 250014, Jinan, People's Republic of China aut Xue Chengshan College of Physics and Electronics, Shandong Normal University, 250014, Jinan, People's Republic of China aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/12(2011-12-01), 1835-1840 0957-4522 22:12<1835 2011 22 10854 https://doi.org/10.1007/s10854-011-0370-5 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-011-0370-5 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Shi Feng College of Physics and Electronics, Shandong Normal University, 250014, Jinan, People's Republic of China aut NATIONALLICENCE 700 1- Xue Chengshan College of Physics and Electronics, Shandong Normal University, 250014, Jinan, People's Republic of China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/12(2011-12-01), 1835-1840 0957-4522 22:12<1835 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer