caa a22 4500 445827556 CHVBK 20180317145303.0 cr unu---uuuuu 170323e20111201xx s 000 0 eng 10.1007/s10854-011-0369-y doi (NATIONALLICENCE)springer-10.1007/s10854-011-0369-y The combined effects of molar concentration of the precursor solution and fluorine doping on the structural and electrical properties of tin oxide films [Elektronische Daten] [L. Chinnappa, K. Ravichandran, K. Saravanakumar, G. Muruganantham, B. Sakthivel] Undoped and fluorine doped tin oxide (FTO) films have been fabricated by employing a simplified and inexpensive spray technique using perfume atomizer at comparatively lesser substrate temperature (320°C). The combined effects of molar concentration of the precursor solution and fluorine doping on the structural and electrical properties of tin oxide films have been reported. The X-ray diffraction studies of undoped films revealed that the interstitial incorporation of Sn atoms can be controlled by employing this simple spray pattern and process conditions. The electrical studies showed that, in governing the variation in sheet resistance, the role of substitutional incorporation of F− ions is predominant over the oxygen vacancies in the case of FTO films deposited from solutions having lower precursor concentration, whereas in the case of higher concentrations the role of oxygen vacancies is predominant. The quantitative results of energy dispersive X-ray analysis (EDAX) and the variations in the Fourier transform infrared (FTIR) peaks are presented as strong evidences for the above observations. Springer Science+Business Media, LLC, 2011 Chinnappa L. Department of Physics, Raja Serfoji Government College (Autonomous), 612005, Thanjavur, Tamil Nadu, India aut Ravichandran K. Department of Physics, AVVM Sri Pushpam College (Autonomous), 613 503, Poondi, Thanjavur, Tamil Nadu, India aut Saravanakumar K. Department of Physics, AVVM Sri Pushpam College (Autonomous), 613 503, Poondi, Thanjavur, Tamil Nadu, India aut Muruganantham G. Department of Physics, AVVM Sri Pushpam College (Autonomous), 613 503, Poondi, Thanjavur, Tamil Nadu, India aut Sakthivel B. Department of Physics, AVVM Sri Pushpam College (Autonomous), 613 503, Poondi, Thanjavur, Tamil Nadu, India aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/12(2011-12-01), 1827-1834 0957-4522 22:12<1827 2011 22 10854 https://doi.org/10.1007/s10854-011-0369-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-011-0369-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Chinnappa L. Department of Physics, Raja Serfoji Government College (Autonomous), 612005, Thanjavur, Tamil Nadu, India aut NATIONALLICENCE 700 1- Ravichandran K. Department of Physics, AVVM Sri Pushpam College (Autonomous), 613 503, Poondi, Thanjavur, Tamil Nadu, India aut NATIONALLICENCE 700 1- Saravanakumar K. Department of Physics, AVVM Sri Pushpam College (Autonomous), 613 503, Poondi, Thanjavur, Tamil Nadu, India aut NATIONALLICENCE 700 1- Muruganantham G. Department of Physics, AVVM Sri Pushpam College (Autonomous), 613 503, Poondi, Thanjavur, Tamil Nadu, India aut NATIONALLICENCE 700 1- Sakthivel B. Department of Physics, AVVM Sri Pushpam College (Autonomous), 613 503, Poondi, Thanjavur, Tamil Nadu, India aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/12(2011-12-01), 1827-1834 0957-4522 22:12<1827 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer