caa a22 4500 445827572 CHVBK 20180317145303.0 cr unu---uuuuu 170323e20111201xx s 000 0 eng 10.1007/s10854-011-0373-2 doi (NATIONALLICENCE)springer-10.1007/s10854-011-0373-2 Effect of simultaneous double doping in Ba and Ti sites on dielectric and ferroelectric properties of sol-gel synthesized nano-BaTiO3 [Elektronische Daten] [Ch. Sameera Devi, M. Vithal, G. Kumar, G. Prasad] Lead free (Ba(1−3x)Nd(2x))(Ti(1−y)Zry)O3 (x=0, 0.025, y=0, 0.025, 0.05) ceramics were prepared successfully using sol-gel method. The effect of Nd, Zr content on dielectric and polarisation properties of BaTiO3 were studied using dielectric and hysteresis measurements. SEM analysis proved that the particle size of compounds as prepared were in the order of 30-60nm. The ferroelectric phase transition from tetragonal to cubic phase was observed around 130°C for pure BaTiO3. With the addition of Nd (2.5mol%) and increasing content of Zr (2.5 and 5mol%), it was observed that transition temperature (Tc) shifts to lower temperatures (70-50°C), but didn't show any relaxor behaviour. Dielectric measurements showed an increase in the values at room temperature in all the doped samples. The synthesized ceramics exhibited typical P-E hysteresis loops at room temperature accompanied by saturation polarisation (Ps) and remanent polarisation (Pr). Behaviour of polarisation phenomena in these compounds showed interesting results with increasing temperature. Springer Science+Business Media, LLC, 2011 Sameera Devi Ch Department of Physics, Osmania University, 500 007, Hyderabad, India aut Vithal M. Department of Chemistry, Osmania University, 500 007, Hyderabad, India aut Kumar G. Department of Physics, Osmania University, 500 007, Hyderabad, India aut Prasad G. Department of Physics, Osmania University, 500 007, Hyderabad, India aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/12(2011-12-01), 1855-1864 0957-4522 22:12<1855 2011 22 10854 https://doi.org/10.1007/s10854-011-0373-2 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-011-0373-2 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Sameera Devi Ch Department of Physics, Osmania University, 500 007, Hyderabad, India aut NATIONALLICENCE 700 1- Vithal M. Department of Chemistry, Osmania University, 500 007, Hyderabad, India aut NATIONALLICENCE 700 1- Kumar G. Department of Physics, Osmania University, 500 007, Hyderabad, India aut NATIONALLICENCE 700 1- Prasad G. Department of Physics, Osmania University, 500 007, Hyderabad, India aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/12(2011-12-01), 1855-1864 0957-4522 22:12<1855 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer