caa a22 4500 445827599 CHVBK 20180317145304.0 cr unu---uuuuu 170323e20111201xx s 000 0 eng 10.1007/s10854-011-0362-5 doi (NATIONALLICENCE)springer-10.1007/s10854-011-0362-5 Properties of neodymium-doped Ca0.15Sr1.85Bi4Ti5O18 ferroelectric ceramics [Elektronische Daten] [Suhua Fan, Fengqing Zhang, Guitao Liu, Qingbo Tian, Luyi Zhu] Bismuth-layered compound Ca0.15Sr1.85Bi4−xNdxTi5O18 (CSBNT, x=0-0.25) ferroelectric ceramics samples were prepared by solid-state reaction method. The effects of Nd3+ doping on their ferroelectric and dielectric properties were investigated. The remnant polarization Pr of CSBNT ceramics increases at beginning then decreases with increasing of Nd3+ doping level, and a maximum Pr value of 9.6μC/cm2 at x=0.05 was detected with a coercive field Ec=80.2kV/cm. Nd3+ dopant not only decreases the Curie temperature linearly, but also the dielectric constant (εr) and dielectric loss tangent (tanδ). The magnitudes of εr and tanδ at the frequency of 100kHz are estimated to be 164 and 0.0083 at room temperature, respectively. Springer Science+Business Media, LLC, 2011 Fan Suhua College of Material Science and Engineering, Shandong Jianzhu University, 250101, Jinan, People's Republic of China aut Zhang Fengqing College of Material Science and Engineering, Shandong Jianzhu University, 250101, Jinan, People's Republic of China aut Liu Guitao College of Material Science and Engineering, Shandong Jianzhu University, 250101, Jinan, People's Republic of China aut Tian Qingbo College of Material Science and Engineering, Shandong Jianzhu University, 250101, Jinan, People's Republic of China aut Zhu Luyi State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, 250100, Jinan, People's Republic of China aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/12(2011-12-01), 1778-1782 0957-4522 22:12<1778 2011 22 10854 https://doi.org/10.1007/s10854-011-0362-5 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-011-0362-5 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Fan Suhua College of Material Science and Engineering, Shandong Jianzhu University, 250101, Jinan, People's Republic of China aut NATIONALLICENCE 700 1- Zhang Fengqing College of Material Science and Engineering, Shandong Jianzhu University, 250101, Jinan, People's Republic of China aut NATIONALLICENCE 700 1- Liu Guitao College of Material Science and Engineering, Shandong Jianzhu University, 250101, Jinan, People's Republic of China aut NATIONALLICENCE 700 1- Tian Qingbo College of Material Science and Engineering, Shandong Jianzhu University, 250101, Jinan, People's Republic of China aut NATIONALLICENCE 700 1- Zhu Luyi State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, 250100, Jinan, People's Republic of China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/12(2011-12-01), 1778-1782 0957-4522 22:12<1778 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer