caa a22 4500 445827610 CHVBK 20180317145304.0 cr unu---uuuuu 170323e20111201xx s 000 0 eng 10.1007/s10854-011-0361-6 doi (NATIONALLICENCE)springer-10.1007/s10854-011-0361-6 Morphology tuned ZnS nanostructures for hydrogen gas sensing [Elektronische Daten] [M. Hafeez, U. Manzoor, A. Bhatti] In this paper we present the effect of dimensionality of ZnS nanostructures on hydrogen gas sensing characteristics. Vapor Liquid Solid growth mode was employed to synthesize ZnS nanostructures with different dimensions by controlling the growth parameters, i.e., variation in the substrate temperature and the carrier gas flow rate. The growth was explained by using the chemical tension model and the saturation conditions were determined for each growth. X-ray diffraction and scanning electron microscopy were used to determine the phase, shape, size and density of the nanostructures. Optical properties of nanostructures also confirmed the presence of different phases of ZnS. A variety of these nanostructures were tested for hydrogen gas sensing. The rapid response time was obtained for nanowires in few hundred millisecond's range with a sensitivity of 8, which was due to its high aspect ratio as compared to the other nanostructures. Springer Science+Business Media, LLC, 2011 Hafeez M. Department of Physics, Center for Micro & Nano Devices, COMSATS Institute of Information Technology, Park Road Campus, 44000, Islamabad, Pakistan aut Manzoor U. Department of Physics, Center for Micro & Nano Devices, COMSATS Institute of Information Technology, Park Road Campus, 44000, Islamabad, Pakistan aut Bhatti A. Department of Physics, Center for Micro & Nano Devices, COMSATS Institute of Information Technology, Park Road Campus, 44000, Islamabad, Pakistan aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/12(2011-12-01), 1772-1777 0957-4522 22:12<1772 2011 22 10854 https://doi.org/10.1007/s10854-011-0361-6 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-011-0361-6 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Hafeez M. Department of Physics, Center for Micro & Nano Devices, COMSATS Institute of Information Technology, Park Road Campus, 44000, Islamabad, Pakistan aut NATIONALLICENCE 700 1- Manzoor U. Department of Physics, Center for Micro & Nano Devices, COMSATS Institute of Information Technology, Park Road Campus, 44000, Islamabad, Pakistan aut NATIONALLICENCE 700 1- Bhatti A. Department of Physics, Center for Micro & Nano Devices, COMSATS Institute of Information Technology, Park Road Campus, 44000, Islamabad, Pakistan aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/12(2011-12-01), 1772-1777 0957-4522 22:12<1772 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer