caa a22 4500 445827645 CHVBK 20180317145304.0 cr unu---uuuuu 170323e20111201xx s 000 0 eng 10.1007/s10854-011-0367-0 doi (NATIONALLICENCE)springer-10.1007/s10854-011-0367-0 Aluminum-doped zinc oxide films grown by atomic layer deposition for transparent electrode applications [Elektronische Daten] [G. Luka, T. Krajewski, B. Witkowski, G. Wisz, I. Virt, E. Guziewicz, M. Godlewski] We obtained zinc oxide films doped with aluminum using atomic layer deposition (ALD). Their morphology, growth mode, optical and electrical properties are studied. Al content dependence is analyzed. Carrier scattering mechanisms in ZnO:Al (AZO) films are investigated from conductivity versus temperature measurements. We also discuss how the film thickness affects its resistivity and optical transmission. The obtained film resistivities, i.e. 7×10−4Ωcm, belong to the lowest reported so far for transparent ZnO:Al films grown by the ALD method. The Author(s), 2011 Luka G. Institute of Physics, Polish Academy of Sciences, Warsaw, Poland aut Krajewski T. Institute of Physics, Polish Academy of Sciences, Warsaw, Poland aut Witkowski B. Institute of Physics, Polish Academy of Sciences, Warsaw, Poland aut Wisz G. University of Rzeszow, Rzeszow, Poland aut Virt I. University of Rzeszow, Rzeszow, Poland aut Guziewicz E. Institute of Physics, Polish Academy of Sciences, Warsaw, Poland aut Godlewski M. Institute of Physics, Polish Academy of Sciences, Warsaw, Poland aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/12(2011-12-01), 1810-1815 0957-4522 22:12<1810 2011 22 10854 https://doi.org/10.1007/s10854-011-0367-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-011-0367-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Luka G. Institute of Physics, Polish Academy of Sciences, Warsaw, Poland aut NATIONALLICENCE 700 1- Krajewski T. Institute of Physics, Polish Academy of Sciences, Warsaw, Poland aut NATIONALLICENCE 700 1- Witkowski B. Institute of Physics, Polish Academy of Sciences, Warsaw, Poland aut NATIONALLICENCE 700 1- Wisz G. University of Rzeszow, Rzeszow, Poland aut NATIONALLICENCE 700 1- Virt I. University of Rzeszow, Rzeszow, Poland aut NATIONALLICENCE 700 1- Guziewicz E. Institute of Physics, Polish Academy of Sciences, Warsaw, Poland aut NATIONALLICENCE 700 1- Godlewski M. Institute of Physics, Polish Academy of Sciences, Warsaw, Poland aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/12(2011-12-01), 1810-1815 0957-4522 22:12<1810 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer