caa a22 4500 44582770X CHVBK 20180317145304.0 cr unu---uuuuu 170323e20110301xx s 000 0 eng 10.1007/s10854-010-0116-9 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0116-9 Thermomigration and electromigration in Sn8Zn3Bi solder joints [Elektronische Daten] [X. Gu, K. Yung, Y. Chan, D. Yang] Individual effect of thermomigration (TM) and combined effect of TM and electromigration (EM) on the microstructural variation in Sn8Zn3Bi was investigated by stressing line-type Au/Ni-P/Cu-Sn8Zn3Bi-Au/Ni-P/Ni solder joints with a 5×103A/cm2 alternating current (AC) or direct current (DC) at 110°C. Due to the different thermoelectric characteristics of Cu and Ni wires, a thermal gradient of 196°C/cm could be established across the solder joints according to the finite element simulation. In AC current stressing, there is no EM effect and only TM dominates the migration. Microstructural study shows that Zn atoms migrate towards the lower temperature side during TM. In DC current stressing, it is found that both EM and TM play important roles depending various experimental conditions. And the energy change during the EM and the TM is estimated to be ∆ωem 3.2×10−28 Joule and ∆ωem 2.2×10−28 Joule, respectively. Upon different current directions in DC current stressing, there is a counteractive or accelerated effect between TM and EM on Zn migration, resulting different microstructures at the cathode side in the solder joints. Springer Science+Business Media, LLC, 2010 Gu X. Shennan Circuits Co. Ltd., Shenzhen, People's Republic of China aut Yung K. Department of Industrial and Systems Engineering, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People's Republic of China aut Chan Y. Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong, People's Republic of China aut Yang D. Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong, People's Republic of China aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/3(2011-03-01), 217-222 0957-4522 22:3<217 2011 22 10854 https://doi.org/10.1007/s10854-010-0116-9 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0116-9 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Gu X. Shennan Circuits Co. Ltd., Shenzhen, People's Republic of China aut NATIONALLICENCE 700 1- Yung K. Department of Industrial and Systems Engineering, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People's Republic of China aut NATIONALLICENCE 700 1- Chan Y. Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong, People's Republic of China aut NATIONALLICENCE 700 1- Yang D. Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong, People's Republic of China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/3(2011-03-01), 217-222 0957-4522 22:3<217 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence SWISSBIB 44582770X BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer