caa a22 4500 445827734 CHVBK 20180317145304.0 cr unu---uuuuu 170323e20110301xx s 000 0 eng 10.1007/s10854-010-0123-x doi (NATIONALLICENCE)springer-10.1007/s10854-010-0123-x Electrical and optical properties of P-doped ZnO thin films by annealing temperatures in Nitrogen ambient [Elektronische Daten] [Seong Kang, Yang Joung, Jung Han, Yung Yoon] The effects of post-annealing temperature on the optical and electrical properties of P-doped ZnO thin films, grown on sapphire substrate, have been investigated when the annealing is performed under nitrogen ambient. Analysis of the XRD shows that regardless of the post-annealing temperature, the P-doped ZnO thin films have grown the (002) peak. The full width of half maximum decreases from 0.194 to 0.181° as the annealing temperature increases from 700 to 900°C. This phenomenon means that the increase of annealing temperature causes enhancement of the thin film's crystalline properties. The results of Hall effect measurements indicate that the P-doped ZnO thin films, annealed at 750 and 800°C exhibit p-type behavior, with hole concentrations of 5.71×1017 cm−3 and 1.20×1018 cm−3, and hole mobilities of 0.12cm2/Vs and 0.08cm2/Vs, respectively. The low-temperature (10K) photoluminescence results reveal that the peaks related to the neutral-acceptor exciton (A0X) at 3.355eV, free electrons to neutral acceptor (FA) at 3.305eV and donor acceptor pair (DAP) at 3.260 and 3.170eV are observed in the films showing p-type behavior with the acceptors. Because P atoms replace O atoms to produce acceptors from P-doped ZnO thin films by the thermal activation process at the appropriate annealing temperature with nitrogen ambient, the p-type ZnO thin films can be fabricated in this way. Springer Science+Business Media, LLC, 2010 Kang Seong Deptartment of Electrical & Semiconductor Engineering, Chonnam National University, 550-749, Yeosu, South Korea aut Joung Yang Deptartment of Electrical & Semiconductor Engineering, Chonnam National University, 550-749, Yeosu, South Korea aut Han Jung Deptartment of Electronics Engineering, Inha University, 402-751, Incheon, South Korea aut Yoon Yung Deptartment of Electronics Engineering, Inha University, 402-751, Incheon, South Korea aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/3(2011-03-01), 248-251 0957-4522 22:3<248 2011 22 10854 https://doi.org/10.1007/s10854-010-0123-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0123-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kang Seong Deptartment of Electrical & Semiconductor Engineering, Chonnam National University, 550-749, Yeosu, South Korea aut NATIONALLICENCE 700 1- Joung Yang Deptartment of Electrical & Semiconductor Engineering, Chonnam National University, 550-749, Yeosu, South Korea aut NATIONALLICENCE 700 1- Han Jung Deptartment of Electronics Engineering, Inha University, 402-751, Incheon, South Korea aut NATIONALLICENCE 700 1- Yoon Yung Deptartment of Electronics Engineering, Inha University, 402-751, Incheon, South Korea aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/3(2011-03-01), 248-251 0957-4522 22:3<248 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer