caa a22 4500 445827785 CHVBK 20180317145304.0 cr unu---uuuuu 170323e20110301xx s 000 0 eng 10.1007/s10854-010-0126-7 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0126-7 Microstructure, dielectric properties and diffuse phase transition of barium stannate titanate ceramics [Elektronische Daten] [Wei Cai, Yize Fan, Jiacheng Gao, Chunlin Fu, Xiaoling Deng] BaSnxTi1-x O3 (short for BTS) ceramics are prepared via the conventional solid state reaction method. The microstructures, diffuse phase transiton, dielectric and ferroelectric properties of BTS ceramics were investigated. These results indicate that Sn4+ ions have entered the unit cell maintaining the perovskite structure of solid solution. The incorporation of SnO2 can limit grain growth in the BTS ceramics. The Curie temperature of BTS ceramics decreases with the increasing of tin content. Addition of tin can decrease dielectric loss of BTS ceramics at room temperature. The diffuseness of the phase transition of BTS ceramics enhances with the increasing of tin content. The coercive electric field (E C) increases as tin content increases when x is 0.10-0.20. Moreover, the remanent polarization (P r) of BTS ceramics decreases with the increasing of tin content. Springer Science+Business Media, LLC, 2010 Cai Wei School of Metallurgical and Materials Engineering, Chongqing University of Science and Technology, 401331, Chongqing, China aut Fan Yize School of Metallurgical and Materials Engineering, Chongqing University of Science and Technology, 401331, Chongqing, China aut Gao Jiacheng College of Materials Science and Engineering, Chongqing University, 400044, Chongqing, China aut Fu Chunlin School of Metallurgical and Materials Engineering, Chongqing University of Science and Technology, 401331, Chongqing, China aut Deng Xiaoling School of Metallurgical and Materials Engineering, Chongqing University of Science and Technology, 401331, Chongqing, China aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/3(2011-03-01), 265-272 0957-4522 22:3<265 2011 22 10854 https://doi.org/10.1007/s10854-010-0126-7 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0126-7 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Cai Wei School of Metallurgical and Materials Engineering, Chongqing University of Science and Technology, 401331, Chongqing, China aut NATIONALLICENCE 700 1- Fan Yize School of Metallurgical and Materials Engineering, Chongqing University of Science and Technology, 401331, Chongqing, China aut NATIONALLICENCE 700 1- Gao Jiacheng College of Materials Science and Engineering, Chongqing University, 400044, Chongqing, China aut NATIONALLICENCE 700 1- Fu Chunlin School of Metallurgical and Materials Engineering, Chongqing University of Science and Technology, 401331, Chongqing, China aut NATIONALLICENCE 700 1- Deng Xiaoling School of Metallurgical and Materials Engineering, Chongqing University of Science and Technology, 401331, Chongqing, China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/3(2011-03-01), 265-272 0957-4522 22:3<265 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer