caa a22 4500 445827815 CHVBK 20180317145304.0 cr unu---uuuuu 170323e20110301xx s 000 0 eng 10.1007/s10854-010-0129-4 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0129-4 Microstructural and electrical characteristics of rapidly annealed Ni/Mo Schottky rectifiers on cleaned n-type GaN (0001) surface [Elektronische Daten] [I. Jyothi, V. Rajagopal Reddy, Chel-Jong Choi] We have investigated the electrical and microstructural properties of Ni/Mo Schottky rectifiers to n-type GaN by current-voltage (I-V) and transmission electron microscopy (TEM) before and after annealing at 600°C. The obtained barrier height for as-deposited Ni/Mo contact is 0.66eV. It is observed that the barrier height increases with annealing temperature up to 500°C, reaching a maximum value of 0.75eV at this temperature. However, the Schottky barrier height of the Ni/Mo Schottky contact slightly decreased to 0.67eV (I-V) when the contact was annealed at 600°C. According to the HRTEM, STEM and EDX analysis, the formation of Ga-Ni interfacial layer at the interface results in the accumulation of gallium vacancies near the surface of the GaN layer. This could be the reason for increase in barrier heights upon annealing at elevated temperatures. The variation in the measured barrier height after annealing at 600°C may be due to the formation of native oxide layer at the interface compared to the 500°C annealed contact. Springer Science+Business Media, LLC, 2010 Jyothi I. Department of Physics, Sri Venkateswara University, 517 502, Tirupati, India aut Rajagopal Reddy V. Department of Physics, Sri Venkateswara University, 517 502, Tirupati, India aut Choi Chel-Jong School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, 561-756, Jeonju, Korea aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/3(2011-03-01), 286-291 0957-4522 22:3<286 2011 22 10854 https://doi.org/10.1007/s10854-010-0129-4 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0129-4 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Jyothi I. Department of Physics, Sri Venkateswara University, 517 502, Tirupati, India aut NATIONALLICENCE 700 1- Rajagopal Reddy V. Department of Physics, Sri Venkateswara University, 517 502, Tirupati, India aut NATIONALLICENCE 700 1- Choi Chel-Jong School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, 561-756, Jeonju, Korea aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/3(2011-03-01), 286-291 0957-4522 22:3<286 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer