caa a22 4500 445827831 CHVBK 20180317145304.0 cr unu---uuuuu 170323e20110301xx s 000 0 eng 10.1007/s10854-010-0132-9 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0132-9 Effect of annealing pressure on structure and properties of ferroelectric Bi3.25La0.75Ti3O12 thin films prepared by sol-gel method [Elektronische Daten] [Jianjun Li, Ping Li, Guojun Zhang, Jun Yu, Jia Li, Weiming Yang] The effect of annealing pressure was investigated for Bi3.25La0.75Ti3O12 (BLT) thin films prepared on Pt/TiO2/SiO2/p-Si(100) substrates by sol-gel method. The amorphous films were annealed at 750°C for 30min under different oxygen pressures varying from 10−4 to 3atm. The largest P r of 17.8μC/cm2 with the E c of 73.6kV/cm was obtained for the film annealed under 0.1atm PO2. Then the structure, crystallization degree, and morphology were characterized by X-ray diffraction (XRD), Raman spectroscopy, and field-emission scanning electron microscope (FSEM) to clarify the effect of annealing pressure on the ferroelectric properties. The XRD and Raman spectroscopy results indicated a clear decreasing of the crystallization degree of the films annealed under 10−4 and 3atm PO2. FSEM results showed the different growth orientation of grains under different oxygen pressures. This study indicated some important effects of annealing pressure on the physical properties of BLT thin films. Springer Science+Business Media, LLC, 2010 Li Jianjun State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, China aut Li Ping State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, China aut Zhang Guojun State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, China aut Yu Jun Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074, Wuhan, China aut Li Jia Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074, Wuhan, China aut Yang Weiming Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074, Wuhan, China aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/3(2011-03-01), 299-303 0957-4522 22:3<299 2011 22 10854 https://doi.org/10.1007/s10854-010-0132-9 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0132-9 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Li Jianjun State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, China aut NATIONALLICENCE 700 1- Li Ping State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, China aut NATIONALLICENCE 700 1- Zhang Guojun State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, China aut NATIONALLICENCE 700 1- Yu Jun Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074, Wuhan, China aut NATIONALLICENCE 700 1- Li Jia Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074, Wuhan, China aut NATIONALLICENCE 700 1- Yang Weiming Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074, Wuhan, China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/3(2011-03-01), 299-303 0957-4522 22:3<299 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer