caa a22 4500 445827890 CHVBK 20180317145304.0 cr unu---uuuuu 170323e20111001xx s 000 0 eng 10.1007/s10854-011-0459-x doi (NATIONALLICENCE)springer-10.1007/s10854-011-0459-x Rosenkranz Ruediger Fraunhofer Institute for Nondestructive Testing, Maria-Reiche-Str. 2, 01109, Dresden, Germany aut Failure localization with active and passive voltage contrast in FIB and SEM [Elektronische Daten] [Ruediger Rosenkranz] The common Passive Voltage Contrast localization method in Focused Ion Beams and Scanning Electron Microscopes can be used for failure localization issues. These methods became widely accepted in the semiconductor failure analysis community. Nearly all labs make use of it. The Active Voltage Contrast method works with additional external voltages applied inside the chamber to certain structures at the sample surface and offers even more localization possibilities. A comprehensive overview over all phenomena related to Voltage Contrast generation is given and the multiple advantages, possibilities and limits of VC failure localization are systemized and discussed. Springer Science+Business Media, LLC, 2011 Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/10(2011-10-01), 1523-1535 0957-4522 22:10<1523 2011 22 10854 https://doi.org/10.1007/s10854-011-0459-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-011-0459-x text/html Onlinezugriff via DOI NATIONALLICENCE 100 1- Rosenkranz Ruediger Fraunhofer Institute for Nondestructive Testing, Maria-Reiche-Str. 2, 01109, Dresden, Germany aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/10(2011-10-01), 1523-1535 0957-4522 22:10<1523 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer