caa a22 4500 445827912 CHVBK 20180317145304.0 cr unu---uuuuu 170323e20111001xx s 000 0 eng 10.1007/s10854-011-0458-y doi (NATIONALLICENCE)springer-10.1007/s10854-011-0458-y Two-photon absorption laser assisted device alteration using continuous wave 1,340nm laser [Elektronische Daten] [Baohua Niu, Patrick Pardy, Jerry Fortier, Mel Ortega, Travis Eiles] We report several cases of two photon absorption (TPA) laser assisted device alteration (LADA) using continuous wave (CW) 1,340nm laser in Si Complimentary Metal-Oxide Semiconductor (CMOS) Integrated Circuits (IC). Two photon absorption using CW 1,340nm laser in Si was confirmed by photon beam induced photocurrent measurements. TPA LADA showed greater than two times better resolution in critical timing circuit defect localization and debug application, when compared with traditional single photon absorption (SPA) LADA with CW 1,064nm laser. A simplified analysis on the resolution improvements presented here showed in good agreement with our experimental observations. Further enhancements of this technology are outlined, which we believe will enable this technology for critical timing circuit debug capabilities well into the future generations of Si CMOS Debug applications. Springer Science+Business Media, LLC, 2011 Niu Baohua Intel Corporation, MS. RA1-319, 2501 NW 229th Avenue, 97124, Hillsboro, OR, USA aut Pardy Patrick Intel Corporation, MS. RA1-319, 2501 NW 229th Avenue, 97124, Hillsboro, OR, USA aut Fortier Jerry Intel Corporation, MS. RA1-319, 2501 NW 229th Avenue, 97124, Hillsboro, OR, USA aut Ortega Mel Intel Corporation, MS. RA1-319, 2501 NW 229th Avenue, 97124, Hillsboro, OR, USA aut Eiles Travis Intel Corporation, MS. RA1-319, 2501 NW 229th Avenue, 97124, Hillsboro, OR, USA aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/10(2011-10-01), 1542-1552 0957-4522 22:10<1542 2011 22 10854 https://doi.org/10.1007/s10854-011-0458-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-011-0458-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Niu Baohua Intel Corporation, MS. RA1-319, 2501 NW 229th Avenue, 97124, Hillsboro, OR, USA aut NATIONALLICENCE 700 1- Pardy Patrick Intel Corporation, MS. RA1-319, 2501 NW 229th Avenue, 97124, Hillsboro, OR, USA aut NATIONALLICENCE 700 1- Fortier Jerry Intel Corporation, MS. RA1-319, 2501 NW 229th Avenue, 97124, Hillsboro, OR, USA aut NATIONALLICENCE 700 1- Ortega Mel Intel Corporation, MS. RA1-319, 2501 NW 229th Avenue, 97124, Hillsboro, OR, USA aut NATIONALLICENCE 700 1- Eiles Travis Intel Corporation, MS. RA1-319, 2501 NW 229th Avenue, 97124, Hillsboro, OR, USA aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/10(2011-10-01), 1542-1552 0957-4522 22:10<1542 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer