caa a22 4500 44582798X CHVBK 20180317145305.0 cr unu---uuuuu 170323e20110401xx s 000 0 eng 10.1007/s10854-010-0153-4 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0153-4 Diamond electromagnetic band gap structure based on Bi(Nb0.992V0.008)O4 ceramic [Elektronische Daten] [Wei Dai, Hong Wang, Minjie Wang, Zhiyuan Shen, Dichen Li, Di Zhou] Three-dimensional (3D) diamond structure electromagnetic band gap (EBG) structures containing high-K Bi(Nb0.992V0.008)O4 (BVN) ceramic, fabricated by rapid-prototyping (RP) and gel casting methods, were investigated. The simulations based on finite element method (FEM) were employed to model the band structures. High-K Bi(Nb0.992V0.008)O4 ceramic was made into gel to cast into the diamond structure molds fabricated by rapid-prototyping method. Then the green bodies were sintered at 900°C to obtain well densified EBG samples. The transmission characteristics of the EBG structures were measured by transmission/reflection (T/R) methods using a vector network analyzer. Wide complete band gap was observed in the transmission characteristics from 10.08 to 12.59GHz and it agreed well with the simulation results, which was from 10 to 12.19GHz. Springer Science+Business Media, LLC, 2010 Dai Wei Electronic Materials Research Laboratory, Key Lab of the Ministry of Education, Xi'an Jiaotong University, 710049, Xi'an, People's Republic of China aut Wang Hong Electronic Materials Research Laboratory, Key Lab of the Ministry of Education, Xi'an Jiaotong University, 710049, Xi'an, People's Republic of China aut Wang Minjie Rapid-prototyping Engineering Centre of the Ministry of Education, Xi'an Jiaotong University, 710049, Xi'an, People's Republic of China aut Shen Zhiyuan Electronic Materials Research Laboratory, Key Lab of the Ministry of Education, Xi'an Jiaotong University, 710049, Xi'an, People's Republic of China aut Li Dichen Rapid-prototyping Engineering Centre of the Ministry of Education, Xi'an Jiaotong University, 710049, Xi'an, People's Republic of China aut Zhou Di Electronic Materials Research Laboratory, Key Lab of the Ministry of Education, Xi'an Jiaotong University, 710049, Xi'an, People's Republic of China aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/4(2011-04-01), 422-425 0957-4522 22:4<422 2011 22 10854 https://doi.org/10.1007/s10854-010-0153-4 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0153-4 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Dai Wei Electronic Materials Research Laboratory, Key Lab of the Ministry of Education, Xi'an Jiaotong University, 710049, Xi'an, People's Republic of China aut NATIONALLICENCE 700 1- Wang Hong Electronic Materials Research Laboratory, Key Lab of the Ministry of Education, Xi'an Jiaotong University, 710049, Xi'an, People's Republic of China aut NATIONALLICENCE 700 1- Wang Minjie Rapid-prototyping Engineering Centre of the Ministry of Education, Xi'an Jiaotong University, 710049, Xi'an, People's Republic of China aut NATIONALLICENCE 700 1- Shen Zhiyuan Electronic Materials Research Laboratory, Key Lab of the Ministry of Education, Xi'an Jiaotong University, 710049, Xi'an, People's Republic of China aut NATIONALLICENCE 700 1- Li Dichen Rapid-prototyping Engineering Centre of the Ministry of Education, Xi'an Jiaotong University, 710049, Xi'an, People's Republic of China aut NATIONALLICENCE 700 1- Zhou Di Electronic Materials Research Laboratory, Key Lab of the Ministry of Education, Xi'an Jiaotong University, 710049, Xi'an, People's Republic of China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/4(2011-04-01), 422-425 0957-4522 22:4<422 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer