caa a22 4500 445828005 CHVBK 20180317145305.0 cr unu---uuuuu 170323e20110401xx s 000 0 eng 10.1007/s10854-010-0139-2 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0139-2 Synthesis of ZnO nanowires by the hydrothermal method, using sol-gel prepared ZnO seed films [Elektronische Daten] [Shr-Nan Bai, Shich-Chuan Wu] Zinc oxide (ZnO) nanowires with various morphologies are synthesized by the hydrothermal method on silicon substrates coated with ZnO thin films. The ZnO films are used as the seed layer and are prepared using the sol-gel technique. Experimental results demonstrate that the synthesis of ZnO nanowires is dependent on the crystalline properties of the ZnO seed-layer films. Sol concentration is the controlled parameter for the preparation of ZnO seed-layer films in this study. The ZnO films are found to have the hexagonal wurtzite structure with highly preferred growth along the c-axis at suitable sol concentrations. The vertically aligned ZnO nanowire arrays on the substrates are believed to be the result of the epitaxial growth of the ZnO seed layer. Scanning electron microscopy shows that nanowires with uniform distribution in length, diameter, and density are obtained. X-ray diffraction patterns clearly reveal that the ZnO nanowires are primarily grown along the c-axis direction. Transmission electron microscopy and selected-area electron diffraction measurements show that the nanowires have good crystalline properties. The well-aligned and high surface areas of the ZnO nanowires make them a potential candidate for applications in solar cells, field emission devices, and ultra-sensitive gas sensors. Springer Science+Business Media, LLC, 2010 Bai Shr-Nan Department of Electronic Engineering and Institute of Electronic, Chienkuo Technology University, 500, Changhua City, Taiwan, ROC aut Wu Shich-Chuan National Nano Device Laboratories, New Construction, 300, Hsinchu City, Taiwan, ROC aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/4(2011-04-01), 339-344 0957-4522 22:4<339 2011 22 10854 https://doi.org/10.1007/s10854-010-0139-2 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0139-2 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Bai Shr-Nan Department of Electronic Engineering and Institute of Electronic, Chienkuo Technology University, 500, Changhua City, Taiwan, ROC aut NATIONALLICENCE 700 1- Wu Shich-Chuan National Nano Device Laboratories, New Construction, 300, Hsinchu City, Taiwan, ROC aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/4(2011-04-01), 339-344 0957-4522 22:4<339 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer