caa a22 4500 445828013 CHVBK 20180317145305.0 cr unu---uuuuu 170323e20110401xx s 000 0 eng 10.1007/s10854-010-0142-7 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0142-7 Photoelectrochemical applications of In2Se3 thin films by chemical deposition [Elektronische Daten] [P. Hankare, K. Rathod, M. Asabe, A. Jadhav, V. Helavi, S. Chavan, K. Garadkar, I. Mulla] Indium selenide films have been synthesized by chemical bath deposition method onto stainless steel plate. The configuration of fabricated cell is n-In2Se3| NaOH(1M)+S(1M)+Na2S(1M) |C(graphite). Characterization of the photoelectrochemical cell was carried out by studying X-ray diffraction, current-voltage and capacitance-voltage characteristics in the dark, barrier height measurements, power output, photoresponse and spectral response. The study shows that the In2Se3 thin films are n-type semiconductor. The junction ideality factor was found to be 3.24. The flat band potential and the barrier height were found to be 0.720V and 0.196eV, respectively. From the study of power output characteristics, open circuit voltage, short circuit current, fill factor and efficiency were found to be 310mV, 20μA, 37.64 and 0.61%, respectively. Photoresponse studies show that the lighted ideality factor is 2.78. Maximum current was observed at 575nm. Springer Science+Business Media, LLC, 2010 Hankare P. Department of Chemistry, Shivaji University, 416004, Kolhapur, MH, India aut Rathod K. Department of Chemistry, Shivaji University, 416004, Kolhapur, MH, India aut Asabe M. Department of Chemistry, Shivaji University, 416004, Kolhapur, MH, India aut Jadhav A. Department of Chemistry, Shivaji University, 416004, Kolhapur, MH, India aut Helavi V. Department of Chemistry, Shivaji University, 416004, Kolhapur, MH, India aut Chavan S. Department of Chemistry, Shivaji University, 416004, Kolhapur, MH, India aut Garadkar K. Department of Chemistry, Shivaji University, 416004, Kolhapur, MH, India aut Mulla I. National Chemical Laboratory, 411008, Pune, MH, India aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/4(2011-04-01), 359-364 0957-4522 22:4<359 2011 22 10854 https://doi.org/10.1007/s10854-010-0142-7 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0142-7 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Hankare P. Department of Chemistry, Shivaji University, 416004, Kolhapur, MH, India aut NATIONALLICENCE 700 1- Rathod K. Department of Chemistry, Shivaji University, 416004, Kolhapur, MH, India aut NATIONALLICENCE 700 1- Asabe M. Department of Chemistry, Shivaji University, 416004, Kolhapur, MH, India aut NATIONALLICENCE 700 1- Jadhav A. Department of Chemistry, Shivaji University, 416004, Kolhapur, MH, India aut NATIONALLICENCE 700 1- Helavi V. Department of Chemistry, Shivaji University, 416004, Kolhapur, MH, India aut NATIONALLICENCE 700 1- Chavan S. Department of Chemistry, Shivaji University, 416004, Kolhapur, MH, India aut NATIONALLICENCE 700 1- Garadkar K. Department of Chemistry, Shivaji University, 416004, Kolhapur, MH, India aut NATIONALLICENCE 700 1- Mulla I. National Chemical Laboratory, 411008, Pune, MH, India aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/4(2011-04-01), 359-364 0957-4522 22:4<359 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer