caa a22 4500 445828021 CHVBK 20180317145305.0 cr unu---uuuuu 170323e20110401xx s 000 0 eng 10.1007/s10854-010-0141-8 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0141-8 Effect of Zn doping on structure and ferroelectric properties of PST thin films prepared by sol-gel method [Elektronische Daten] [Zan Zheng, Hongjian Zhao, Wenjian Weng, Gaorong Han, Ning Ma, Piyi Du] (PbySr1−y )ZnxTi1−x O3−x thin films were prepared on ITO/glass substrate by sol-gel process using dip-coating method. The phase structure, morphology and ferroelectric property of the thin film were studied. All the thin films show the typical perovskite phase structure. Both the crystallinity and c/a ratio of the perovskite phase increases initially and then decreases gradually with doping Zn in the thin film. Ferroelectric properties of the Zn-doped PST thin films, including ferroelectric hysteresis-loop, remnant polarization and coercive force, decrease gradually with increasing Zn. And the effect of Zn on ferroelectric properties is more obvious in PST thin film with high content of Pb than that with low Pb although the high lead thin film exhibits high intrinsic ferroelectric properties. Springer Science+Business Media, LLC, 2010 Zheng Zan State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China aut Zhao Hongjian State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China aut Weng Wenjian State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China aut Han Gaorong State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China aut Ma Ning State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China aut Du Piyi State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/4(2011-04-01), 351-358 0957-4522 22:4<351 2011 22 10854 https://doi.org/10.1007/s10854-010-0141-8 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0141-8 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Zheng Zan State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China aut NATIONALLICENCE 700 1- Zhao Hongjian State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China aut NATIONALLICENCE 700 1- Weng Wenjian State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China aut NATIONALLICENCE 700 1- Han Gaorong State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China aut NATIONALLICENCE 700 1- Ma Ning State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China aut NATIONALLICENCE 700 1- Du Piyi State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/4(2011-04-01), 351-358 0957-4522 22:4<351 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer