caa a22 4500 445828064 CHVBK 20180317145305.0 cr unu---uuuuu 170323e20110401xx s 000 0 eng 10.1007/s10854-010-0143-6 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0143-6 Effect of a zinc oxide, at the cathode interface, on the efficiency of inverted organic photovoltaic cells based on the CuPc/C60 couple [Elektronische Daten] [Y. Lare, M. Banéto, L. Cattin, M. Morsli, K. Jondo, K. Napo, J. Bernède] The effect of ZnO buffer layer on the performances of inverted multilayers organic solar cells has been studied. ZnO:Al conductive films and insulating ZnO films deposited by spin coating have been probed. The ZnO buffer layer has been introduced between the ITO cathode and the Organic acceptor. The cells are based on the multilayer junctions bathocuproine/fullerene/copper phthalocyanine. The organic photovoltaic cells performances improvement depends of the ZnO layer introduced. ZnO:Al conductive layers decreases the potential barrier at the interface cathode/organic. This allows decreasing the series resistance which improves significantly the cell efficiency. Insulating ZnO increases only slightly the solar cells performance by increasing significantly the shunt resistance and therefore the open circuit voltage of the cells. Springer Science+Business Media, LLC, 2010 Lare Y. CUER-UL, Université de Lomé, Lomé, Togo aut Banéto M. CUER-UL, Université de Lomé, Lomé, Togo aut Cattin L. Université de Nantes, Institut des Matériaux Jean Rouxel (IMN), CNRS, 2 rue de la Houssinière, BP 32229, 44322, Nantes cedex 3, France aut Morsli M. Université de Nantes, Nantes Atlantique Universités, LAMP, EA 3825, Faculté des Sciences et des Techniques, 2 rue de la Houssinière, BP 92208, 44000, Nantes, France aut Jondo K. CUER-UL, Université de Lomé, Lomé, Togo aut Napo K. CUER-UL, Université de Lomé, Lomé, Togo aut Bernède J. Université de Nantes, Nantes Atlantique Universités, LAMP, EA 3825, Faculté des Sciences et des Techniques, 2 rue de la Houssinière, BP 92208, 44000, Nantes, France aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/4(2011-04-01), 365-370 0957-4522 22:4<365 2011 22 10854 https://doi.org/10.1007/s10854-010-0143-6 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0143-6 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Lare Y. CUER-UL, Université de Lomé, Lomé, Togo aut NATIONALLICENCE 700 1- Banéto M. CUER-UL, Université de Lomé, Lomé, Togo aut NATIONALLICENCE 700 1- Cattin L. Université de Nantes, Institut des Matériaux Jean Rouxel (IMN), CNRS, 2 rue de la Houssinière, BP 32229, 44322, Nantes cedex 3, France aut NATIONALLICENCE 700 1- Morsli M. Université de Nantes, Nantes Atlantique Universités, LAMP, EA 3825, Faculté des Sciences et des Techniques, 2 rue de la Houssinière, BP 92208, 44000, Nantes, France aut NATIONALLICENCE 700 1- Jondo K. CUER-UL, Université de Lomé, Lomé, Togo aut NATIONALLICENCE 700 1- Napo K. CUER-UL, Université de Lomé, Lomé, Togo aut NATIONALLICENCE 700 1- Bernède J. Université de Nantes, Nantes Atlantique Universités, LAMP, EA 3825, Faculté des Sciences et des Techniques, 2 rue de la Houssinière, BP 92208, 44000, Nantes, France aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/4(2011-04-01), 365-370 0957-4522 22:4<365 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer