caa a22 4500 445828080 CHVBK 20180317145305.0 cr unu---uuuuu 170323e20110401xx s 000 0 eng 10.1007/s10854-010-0155-2 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0155-2 Preparation and characterization of highly c -axis textured MgO buffer layer grown on Si(100) substrate by RF magnetron sputtering for use as growth template of ferroelectric thin film [Elektronische Daten] [Wen-Ching Shih, Tzyy-Long Wang, Ming-Han Chiang, Mu-Shiang Wu] Highly c-axis textured MgO thin films were grown directly on Si(100) substrates without any buffer layer by RF magnetron sputtering for use as growth template of ferroelectric film. We fixed the target-to-substrate spacing of 40mm and then changed the substrate temperature, deposition pressure, and RF power to study the effect of deposition parameters on the growth of c-axis textured MgO thin films. The as-grown films were post-annealed by the rapid thermal annealing (RTA) and furnace annealing to improve the film quality. The experimental results show that the optimum deposition parameters are substrate temperature of 350°C, oxygen pressure of 15 mTorr and RF power of 75W. The full width at half maximum intensity (FWHM) of MgO(200) peak obtained from the XRD measurement was 0.8°, and it was further reduced to 0.5° and 0.27° after annealing by RTA and furnace, respectively. Highly c-axis textured PZT and BaTiO3 films could be obtained on this template. Hysteresis loops of the BaTiO3 films deposited on MgO(100) single crystalline substrate and MgO(200)/Si(100) template were measured for comparison. The results show that MgO/Si templates thus obtained are suitable for the synthesis of perovskite ferroelectric thin films. Springer Science+Business Media, LLC, 2010 Shih Wen-Ching Graduate Institute in Electro-Optical Engineering, Tatung University, No. 40, Sec. 3, Chungshan North Road, 104, Taipei, Taiwan, ROC aut Wang Tzyy-Long Graduate Institute in Electro-Optical Engineering, Tatung University, No. 40, Sec. 3, Chungshan North Road, 104, Taipei, Taiwan, ROC aut Chiang Ming-Han Graduate Institute in Electro-Optical Engineering, Tatung University, No. 40, Sec. 3, Chungshan North Road, 104, Taipei, Taiwan, ROC aut Wu Mu-Shiang Graduate Institute in Electro-Optical Engineering, Tatung University, No. 40, Sec. 3, Chungshan North Road, 104, Taipei, Taiwan, ROC aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/4(2011-04-01), 430-436 0957-4522 22:4<430 2011 22 10854 https://doi.org/10.1007/s10854-010-0155-2 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0155-2 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Shih Wen-Ching Graduate Institute in Electro-Optical Engineering, Tatung University, No. 40, Sec. 3, Chungshan North Road, 104, Taipei, Taiwan, ROC aut NATIONALLICENCE 700 1- Wang Tzyy-Long Graduate Institute in Electro-Optical Engineering, Tatung University, No. 40, Sec. 3, Chungshan North Road, 104, Taipei, Taiwan, ROC aut NATIONALLICENCE 700 1- Chiang Ming-Han Graduate Institute in Electro-Optical Engineering, Tatung University, No. 40, Sec. 3, Chungshan North Road, 104, Taipei, Taiwan, ROC aut NATIONALLICENCE 700 1- Wu Mu-Shiang Graduate Institute in Electro-Optical Engineering, Tatung University, No. 40, Sec. 3, Chungshan North Road, 104, Taipei, Taiwan, ROC aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/4(2011-04-01), 430-436 0957-4522 22:4<430 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer