caa a22 4500 445828110 CHVBK 20180317145305.0 cr unu---uuuuu 170323e20110401xx s 000 0 eng 10.1007/s10854-010-0136-5 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0136-5 Influence of Dy-doping on ferroelectric and dielectric properties in Bi1.05−xDyxFeO3 ceramics [Elektronische Daten] [Yubin Li, Jun Yu, Jianjun Li, Chaodan Zheng, Yunyi Wu, Yuan Zhao, Meng Wang, Yunbo Wang] Bi1.05−xDyxFeO3 (BDFO) (x=0−0.2) ceramics were synthesized by solid-state reaction method. The influence of Dy dopant on crystal structural, dielectric and ferroelectric properties was investigated. The lattice parameter and the Curie temperature of BDFO were degraded continuously with increasing contents of Dy3+ cations. Leakage current density, ferroelectric polarization and dielectric loss were improved by appropriate Dy doping. When x=0.1, BDFO showed the best electric properties. At applied electric field of 53kV/cm, the remnant polarization (2P r) was 12.2μC/cm2.These improvements in electric properties in BDFO ceramics could have resulted from the relatively low oxygen vacancy concentration and structural distortion. Springer Science+Business Media, LLC, 2010 Li Yubin Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China aut Yu Jun Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China aut Li Jianjun Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China aut Zheng Chaodan Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China aut Wu Yunyi Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China aut Zhao Yuan Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China aut Wang Meng Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China aut Wang Yunbo Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/4(2011-04-01), 323-327 0957-4522 22:4<323 2011 22 10854 https://doi.org/10.1007/s10854-010-0136-5 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0136-5 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Li Yubin Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China aut NATIONALLICENCE 700 1- Yu Jun Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China aut NATIONALLICENCE 700 1- Li Jianjun Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China aut NATIONALLICENCE 700 1- Zheng Chaodan Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China aut NATIONALLICENCE 700 1- Wu Yunyi Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China aut NATIONALLICENCE 700 1- Zhao Yuan Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China aut NATIONALLICENCE 700 1- Wang Meng Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China aut NATIONALLICENCE 700 1- Wang Yunbo Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/4(2011-04-01), 323-327 0957-4522 22:4<323 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer