caa a22 4500 445828277 CHVBK 20180317145306.0 cr unu---uuuuu 170323e20110801xx s 000 0 eng 10.1007/s10854-010-0255-z doi (NATIONALLICENCE)springer-10.1007/s10854-010-0255-z Fabrication, dielectric and ferroelectric properties of Ba0.6Sr0.4TiO3 film with preferred orientation [Elektronische Daten] [Meng Wang, Jianjun Li, Qiang Lei, Jun Yu, Wenli Zhou] Ba0.6Sr0.4TiO3 films were fabricated by RF magnetron sputtering method. The X-ray diffraction (XRD) showed that the preferred orientation of films growing on platinum Si substrates can be tailored by sputtering pressure. The processing parameters such as sputtering pressure and substrate temperature were optimized to obtain a developed perovskite film with (110) preferred orientation. The polarization hysteresis loops and permittivity-voltage curves of the (110)-oriented film have been investigated,which demonstrated that the film is in ferroelectric phase at room temperature. Besides, it had excellent fatigue properties without polarization reduction after about 1010 switch cycles, and showed low leakage current (10−9-10−7 A/cm2) within an applied voltage of 5V. Finally, the leakage current mechanism was studied. Springer Science+Business Media, LLC, 2010 Wang Meng Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074, Wuhan, China aut Li Jianjun Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074, Wuhan, China aut Lei Qiang Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074, Wuhan, China aut Yu Jun Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074, Wuhan, China aut Zhou Wenli Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074, Wuhan, China aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/8(2011-08-01), 1033-1039 0957-4522 22:8<1033 2011 22 10854 https://doi.org/10.1007/s10854-010-0255-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0255-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Wang Meng Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074, Wuhan, China aut NATIONALLICENCE 700 1- Li Jianjun Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074, Wuhan, China aut NATIONALLICENCE 700 1- Lei Qiang Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074, Wuhan, China aut NATIONALLICENCE 700 1- Yu Jun Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074, Wuhan, China aut NATIONALLICENCE 700 1- Zhou Wenli Department of Electronic Science and Technology, Huazhong University of Science and Technology, 430074, Wuhan, China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/8(2011-08-01), 1033-1039 0957-4522 22:8<1033 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer