caa a22 4500 445828285 CHVBK 20180317145306.0 cr unu---uuuuu 170323e20110801xx s 000 0 eng 10.1007/s10854-010-0239-z doi (NATIONALLICENCE)springer-10.1007/s10854-010-0239-z Characterization of Tin disulphide thin films prepared at different substrate temperature using spray pyrolysis technique [Elektronische Daten] [K. Vijayakumar, C. Sanjeeviraja, M. Jayachandran, L. Amalraj] Thin films of tin disulphide on glass substrates were prepared by spray pyrolysis technique using precursor solutions of SnCl2·2H2O and n-n dimethyl thiourea at different substrate temperatures varied in the range 348-423K. Using the hot probe technique the type of conductivity is found to be n type. X ray diffraction analysis revealed the polycrystalline nature with increasing crystallinity with respect to substrate temperature. The preferential orientation growth of SnS2 compound having hexagonal structure along (002) plane increased with the substrate temperature. The size of the tin disulphide crystallites with nano dimension were determined using the Full Width Half Maximum values of the Bragg peaks and found to increase with the substrate temperature. The surface morphology had been observed on the surface of these films using scanning electron microscope. The optical absorption and transmittance spectra have been recorded for these films in the wavelength range 400-800nm. Thickness of these films was found using surface roughness profilometer. The absorption coefficient (α) was determined for all the films. Direct band gap values were found to exist in all the films deposited at different substrate temperatures. The value of room temperature resistivity in dark decreased from 5.95×103Ωcm for the amorphous film deposited at low temperature (348K) to 2.22×103Ωcm for the polycrystalline film deposited at high temperature (423K) whereas the resistivity values in light decreased from 1.48×103 to 0.55×103Ωcm respectively, which is determined using the four probe method. Activation energy of these thin films was determined by Arrhenius plot. Springer Science+Business Media, LLC, 2010 Vijayakumar K. Department of Physics, K.L.N. College of Information Technology, 630 611, Madurai, India aut Sanjeeviraja C. Department of Physics, Alagappa University, 630 003, Karaikudi, India aut Jayachandran M. ECMS Division, Central Electrochemical Research Institute, 630 006, Karaikudi, India aut Amalraj L. Department of Physics, V.H.N.S.N. College, 626 001, Virudhunagar, India aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/8(2011-08-01), 929-935 0957-4522 22:8<929 2011 22 10854 https://doi.org/10.1007/s10854-010-0239-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0239-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Vijayakumar K. Department of Physics, K.L.N. College of Information Technology, 630 611, Madurai, India aut NATIONALLICENCE 700 1- Sanjeeviraja C. Department of Physics, Alagappa University, 630 003, Karaikudi, India aut NATIONALLICENCE 700 1- Jayachandran M. ECMS Division, Central Electrochemical Research Institute, 630 006, Karaikudi, India aut NATIONALLICENCE 700 1- Amalraj L. Department of Physics, V.H.N.S.N. College, 626 001, Virudhunagar, India aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/8(2011-08-01), 929-935 0957-4522 22:8<929 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer