caa a22 4500 445828293 CHVBK 20180317145306.0 cr unu---uuuuu 170323e20110801xx s 000 0 eng 10.1007/s10854-010-0237-1 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0237-1 Solid-phase epitaxial growth of (111)-oriented Si film on InGaO3(ZnO)5 buffer layer [Elektronische Daten] [Tao Chen, Meng-Yue Wu, Ryoichi Ishihara, Kenji Nomura, Toshio Kamiya, Hideo Hosono, C. Beenakker] In this paper, the (0001) surface of an InGaO3(ZnO)5 (c-IGZO) single-crystal buffer layer was used as a seed layer to control the orientation of a Si film in solid-phase heteroepitaxial growth at 950°C. Despite a large lattice misfit of 20%, electron backscattering diffraction (EBSD) and transmission electron microscope (TEM) measurements substantiated that the (111)-oriented Si layers are grown epitaxially on the c-IGZO (0001) surface, which is explained by domain-matched epitaxy. The process can be further developed for low temperature process by utilizing excimer laser annealing to produce highly uniform (111) oriented Si TFT over a large area. The Author(s), 2010 Chen Tao Delft Institute of Microsystems and Nanoelectronics Technology (DIMES), Laboratory of Electronic Components, Technology and Materials (ECTM), Delft University of Technology, Feldmannweg 17, 2628 CT, Delft, The Netherlands aut Wu Meng-Yue Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ, Delft, The Netherlands aut Ishihara Ryoichi Delft Institute of Microsystems and Nanoelectronics Technology (DIMES), Laboratory of Electronic Components, Technology and Materials (ECTM), Delft University of Technology, Feldmannweg 17, 2628 CT, Delft, The Netherlands aut Nomura Kenji Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, 226-8503, Midori, Yokohama, Japan aut Kamiya Toshio Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, 226-8503, Midori, Yokohama, Japan aut Hosono Hideo Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, 226-8503, Midori, Yokohama, Japan aut Beenakker C. Delft Institute of Microsystems and Nanoelectronics Technology (DIMES), Laboratory of Electronic Components, Technology and Materials (ECTM), Delft University of Technology, Feldmannweg 17, 2628 CT, Delft, The Netherlands aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/8(2011-08-01), 920-923 0957-4522 22:8<920 2011 22 10854 https://doi.org/10.1007/s10854-010-0237-1 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0237-1 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Chen Tao Delft Institute of Microsystems and Nanoelectronics Technology (DIMES), Laboratory of Electronic Components, Technology and Materials (ECTM), Delft University of Technology, Feldmannweg 17, 2628 CT, Delft, The Netherlands aut NATIONALLICENCE 700 1- Wu Meng-Yue Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ, Delft, The Netherlands aut NATIONALLICENCE 700 1- Ishihara Ryoichi Delft Institute of Microsystems and Nanoelectronics Technology (DIMES), Laboratory of Electronic Components, Technology and Materials (ECTM), Delft University of Technology, Feldmannweg 17, 2628 CT, Delft, The Netherlands aut NATIONALLICENCE 700 1- Nomura Kenji Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, 226-8503, Midori, Yokohama, Japan aut NATIONALLICENCE 700 1- Kamiya Toshio Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, 226-8503, Midori, Yokohama, Japan aut NATIONALLICENCE 700 1- Hosono Hideo Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, 226-8503, Midori, Yokohama, Japan aut NATIONALLICENCE 700 1- Beenakker C. Delft Institute of Microsystems and Nanoelectronics Technology (DIMES), Laboratory of Electronic Components, Technology and Materials (ECTM), Delft University of Technology, Feldmannweg 17, 2628 CT, Delft, The Netherlands aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/8(2011-08-01), 920-923 0957-4522 22:8<920 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer