caa a22 4500 445828382 CHVBK 20180317145306.0 cr unu---uuuuu 170323e20110801xx s 000 0 eng 10.1007/s10854-010-0284-7 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0284-7 Influence of gamma radiation on the optical properties of ZnSe nanocrystalline thin films [Elektronische Daten] [I. El Zawawi, N. Rabie, K. Sedeek, A. Adam, Manal Mahdy] The effect of gamma (γ) irradiation on the absorption spectra and the optical energy bandwidth of ZnSe nanocrystalline thin films have been studied. Thin films of different thicknesses from 20 to 120nm were deposited by Inert gas condensation technique at constant temperature of 300K and under pressure 2×10−3 Torr of Argon gas flow. The optical transmission (T) and optical reflection (R) in the wavelength range 190-2,500nm of ZnSe nanocrystalline thin films were measure for unirradiated and irradiated films. The dependence of the absorption coefficient α on photon energy hν was determined for different γ-doses irradiated films. The ZnSe thin films show direct allowed interband transition by γ-doses. Both the absorption coefficient (α) and optical energy bandwidth were found to be γ-dose dependent. The optical energy band width has been decreased by irradiated of γ-doses. The Egn values of irradiated thin films by 34.5Gy of γ-doses were recovered to nearly their initial values after 100days at 300K. Springer Science+Business Media, LLC, 2011 El Zawawi I. Solid State Physics Department, National Research Center, 12622, Dokki, Cairo, Egypt aut Rabie N. National Institute of Standards, Ionizing Radiation Metrology Department, Cairo, Egypt aut Sedeek K. Physics Department, Faculty of Science (Girls), Al-Azhar University, Cairo, Egypt aut Adam A. Physics Department, Faculty of Science (Girls), Al-Azhar University, Cairo, Egypt aut Mahdy Manal Solid State Physics Department, National Research Center, 12622, Dokki, Cairo, Egypt aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/8(2011-08-01), 1195-1202 0957-4522 22:8<1195 2011 22 10854 https://doi.org/10.1007/s10854-010-0284-7 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0284-7 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- El Zawawi I. Solid State Physics Department, National Research Center, 12622, Dokki, Cairo, Egypt aut NATIONALLICENCE 700 1- Rabie N. National Institute of Standards, Ionizing Radiation Metrology Department, Cairo, Egypt aut NATIONALLICENCE 700 1- Sedeek K. Physics Department, Faculty of Science (Girls), Al-Azhar University, Cairo, Egypt aut NATIONALLICENCE 700 1- Adam A. Physics Department, Faculty of Science (Girls), Al-Azhar University, Cairo, Egypt aut NATIONALLICENCE 700 1- Mahdy Manal Solid State Physics Department, National Research Center, 12622, Dokki, Cairo, Egypt aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/8(2011-08-01), 1195-1202 0957-4522 22:8<1195 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer