caa a22 4500 445828463 CHVBK 20180317145306.0 cr unu---uuuuu 170323e20110801xx s 000 0 eng 10.1007/s10854-010-0245-1 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0245-1 Preparation and thermoelectric properties of BP films on SOI and sapphire substrates [Elektronische Daten] [Y. Kumashiro, K. Nakamura, T. Enomoto, M. Tanaka] The chemical vapor deposited (CVD) BP films on Si(100) (190nm)/SiO x (370nm)/Si(100) (625μm) (SOI) and sapphire (R-plane) (600μm) substrates were prepared by the thermal decomposition of the B2H6-PH3-H2 system in the temperature range of 800-1050°C for the deposition time of 1.5h. The BP films were epitaxially grown on the SOI substrate, but a two-step growth method, i.e., a buffer layer at lower temperature and sequent CVD process at 1000°C for 1.5h was effective for obtaining a smooth film on the sapphire substrate. The electrical conduction types and electrical properties of these films depended on the growth temperature, gases flow rates and substrates. The thermal conductivity of the film could be replaced by the substrate, so that the calculated thermoelectric figure-of-merit (Z) for the BP films on the SOI substrate was 10−4-10−3/K at 700-1000K. Those on the sapphire substrate were 10−6-10−5/K for the direct growth and 10−5-10−4/K for the two-step growth at 700-900K, indicating that the film on a sapphire by two-step growth would reduce the defect concentrations and promote the electrical conductivity. Springer Science+Business Media, LLC, 2010 Kumashiro Y. Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, 240-8501, Yokohama, Japan aut Nakamura K. College of Humanities and Science, Nihon University, 3-25-40 Sakurajosui Setagaya, 156-0045, Tokyo, Japan aut Enomoto T. Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, 240-8501, Yokohama, Japan aut Tanaka M. Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, 240-8501, Yokohama, Japan aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/8(2011-08-01), 966-973 0957-4522 22:8<966 2011 22 10854 https://doi.org/10.1007/s10854-010-0245-1 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0245-1 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kumashiro Y. Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, 240-8501, Yokohama, Japan aut NATIONALLICENCE 700 1- Nakamura K. College of Humanities and Science, Nihon University, 3-25-40 Sakurajosui Setagaya, 156-0045, Tokyo, Japan aut NATIONALLICENCE 700 1- Enomoto T. Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, 240-8501, Yokohama, Japan aut NATIONALLICENCE 700 1- Tanaka M. Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, 240-8501, Yokohama, Japan aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/8(2011-08-01), 966-973 0957-4522 22:8<966 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer