caa a22 4500 44582848X CHVBK 20180317145306.0 cr unu---uuuuu 170323e20110801xx s 000 0 eng 10.1007/s10854-010-0241-5 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0241-5 The structure and mechanism of porous silica films by sol-gel method using poly(ethylene glycol) and side-chain polyether modified polydimethylsiloxane with terminal Si-CH3 as templates [Elektronische Daten] [Dong Dong, Xiaobo Liu, Wencheng Hu] This paper has successfully prepared thick and crack-free silica films with nano-porous structure at a high annealing temperature of 650°C via sol-gel processing by introducing poly(ethylene glycol) (PEG) and side-chain polyether modified polydimethylsiloxane with terminal Si-CH3 (p-PDMS) as templates to the acid-catalyzed silica system. The differential thermal analysis (DTA), thermogravimetric analysis (TGA), FTIR spectra, ellipsometry, and field emitted scanning electron microscope (FESEM) were used to characterize the samples. The present work focused on the effect of the two polymer templates on the microstructures of samples, and a model concerning the pore formation was suggested. Springer Science+Business Media, LLC, 2010 Dong Dong State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut Liu Xiaobo State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut Hu Wencheng State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/8(2011-08-01), 944-948 0957-4522 22:8<944 2011 22 10854 https://doi.org/10.1007/s10854-010-0241-5 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0241-5 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Dong Dong State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut NATIONALLICENCE 700 1- Liu Xiaobo State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut NATIONALLICENCE 700 1- Hu Wencheng State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/8(2011-08-01), 944-948 0957-4522 22:8<944 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer