caa a22 4500 445828498 CHVBK 20180317145306.0 cr unu---uuuuu 170323e20110801xx s 000 0 eng 10.1007/s10854-010-0282-9 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0282-9 Dielectric behavior and Raman spectra of lanthanum-doped lead magnesium niobate ceramics [Elektronische Daten] [Tao Li, Jingsong Liu, Huiqin Li, Youchao Xu] Lanthanum-doped lead magnesium niobate (PLMN) ceramics were fabricated by columbite route. The effects of La-addition on dielectric behavior and Raman spectra were investigated. The trivalent La3+-doping showed inhibiting effects on grain growth process. The average grain size decreased and pyrochlore phase was detected along with the perovskite phase above 2 mol% La-addition. Temperature dependence of permittivity measured at 1kHz was investigated. Due to La3+-doping, the maximum of dielectric constant decreased and the temperature of the maximum permittivity moved to lower temperature. An oval-form hysteresis loop was observed on La-doped (3 mol%) lead magnesium niobate (PMN) sample, which revealed that La-doped PMN owned partially normal ferroelectric feature. Raman spectra showed a shift of the peak around 270cm−1, which identified a distortion of the center symmetric ordered structure and enforced B-site compositional fluctuation. The shift of A1g mode (around 780cm−1) indicated that degree of chemical order at B-site increased and PLMN contained 1:1 B-site ordered nanoregion (clusters) with Fm-3m symmetry. Springer Science+Business Media, LLC, 2011 Li Tao School of Material Science and Engineering, Southwest University of Science and Technology, 621010, Mianyang, People's Republic of China aut Liu Jingsong School of Material Science and Engineering, Southwest University of Science and Technology, 621010, Mianyang, People's Republic of China aut Li Huiqin School of Material Science and Engineering, Southwest University of Science and Technology, 621010, Mianyang, People's Republic of China aut Xu Youchao School of Material Science and Engineering, Southwest University of Science and Technology, 621010, Mianyang, People's Republic of China aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/8(2011-08-01), 1188-1194 0957-4522 22:8<1188 2011 22 10854 https://doi.org/10.1007/s10854-010-0282-9 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0282-9 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Li Tao School of Material Science and Engineering, Southwest University of Science and Technology, 621010, Mianyang, People's Republic of China aut NATIONALLICENCE 700 1- Liu Jingsong School of Material Science and Engineering, Southwest University of Science and Technology, 621010, Mianyang, People's Republic of China aut NATIONALLICENCE 700 1- Li Huiqin School of Material Science and Engineering, Southwest University of Science and Technology, 621010, Mianyang, People's Republic of China aut NATIONALLICENCE 700 1- Xu Youchao School of Material Science and Engineering, Southwest University of Science and Technology, 621010, Mianyang, People's Republic of China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/8(2011-08-01), 1188-1194 0957-4522 22:8<1188 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer