caa a22 4500 445828501 CHVBK 20180317145306.0 cr unu---uuuuu 170323e20110801xx s 000 0 eng 10.1007/s10854-010-0254-0 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0254-0 Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates [Elektronische Daten] [Meng Wei, Xiaoliang Wang, Xu Pan, Hongling Xiao, Cuimei Wang, Cuibai Yang, Zhanguo Wang] Crack-free GaN epitaxial layer was obtained through inserting 80nm graded AlGaN buffer layer between GaN epilayer and high temperature AlN buffer on 2-in Si(111) substrates by metal organic chemical vapor deposition. This paper investigated the influence of AlGaN buffer thickness on the structural properties of the GaN epilayer. It was confirmed from the optical microscopy and scanning electronic microscopy that the graded AlGaN buffer with optimized thickness had a remarkable effect on introducing relative compressive strain to the top GaN layer and preventing the formation of cracks. X-ray diffraction and atomic force microscopy analysis showed that AlGaN buffer with proper thickness could improve the crystal quality and surface morphology of the GaN film. Transmission electron microscopy analysis revealed that a significant reduction in threading dislocations was achieved in GaN epilayer by the insertion of graded AlGaN buffer. Springer Science+Business Media, LLC, 2010 Wei Meng Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut Wang Xiaoliang Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut Pan Xu Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut Xiao Hongling Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut Wang Cuimei Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut Yang Cuibai Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut Wang Zhanguo Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/8(2011-08-01), 1028-1032 0957-4522 22:8<1028 2011 22 10854 https://doi.org/10.1007/s10854-010-0254-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0254-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Wei Meng Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut NATIONALLICENCE 700 1- Wang Xiaoliang Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut NATIONALLICENCE 700 1- Pan Xu Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut NATIONALLICENCE 700 1- Xiao Hongling Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut NATIONALLICENCE 700 1- Wang Cuimei Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut NATIONALLICENCE 700 1- Yang Cuibai Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut NATIONALLICENCE 700 1- Wang Zhanguo Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/8(2011-08-01), 1028-1032 0957-4522 22:8<1028 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer