caa a22 4500 445828595 CHVBK 20180317145307.0 cr unu---uuuuu 170323e20110801xx s 000 0 eng 10.1007/s10854-010-0238-0 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0238-0 Effects of P2O5 on sinterability, microstructures and properties of glass/alumina composites [Elektronische Daten] [Bo Li, Ying Yuan, Shuren Zhang, Yang Xu] We prepared the low-temperature fired glass/alumina composites and investigated the influence of P2O5 on the sinterability, microstructure, dielectric property, and mechanical strength. The result showed that although the nucleating agent P2O5 can promote the crystallization of CaO-B2O3-SiO2 (CBS) glass, excessive P2O5 have negative effects on the sintering behavior of composites. Because the density decreases gradually with increasing P2O5 addition, the dielectric and mechanical properties deteriorate dramatically. The densification mechanism via P2O5 modification is revealed further. Due to the crystallization effect of P2O5, the increase in viscosity impedes the flowability and wettability of liquid glass, which partly inhibits the liquid-phase sintering. 2mol% P2O5-added CBS glass/alumina composite achieves densification at 900°C (2.79g/cm3) and exhibits good performances: low dielectric constant (5.84), low dielectric loss (1.17×10−3), and high flexural strength (166MPa). Springer Science+Business Media, LLC, 2010 Li Bo State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054, Chengdu, China aut Yuan Ying State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054, Chengdu, China aut Zhang Shuren State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054, Chengdu, China aut Xu Yang State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054, Chengdu, China aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/8(2011-08-01), 924-928 0957-4522 22:8<924 2011 22 10854 https://doi.org/10.1007/s10854-010-0238-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0238-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Li Bo State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054, Chengdu, China aut NATIONALLICENCE 700 1- Yuan Ying State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054, Chengdu, China aut NATIONALLICENCE 700 1- Zhang Shuren State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054, Chengdu, China aut NATIONALLICENCE 700 1- Xu Yang State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054, Chengdu, China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/8(2011-08-01), 924-928 0957-4522 22:8<924 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer