caa a22 4500 445828617 CHVBK 20180317145307.0 cr unu---uuuuu 170323e20110801xx s 000 0 eng 10.1007/s10854-010-0246-0 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0246-0 Preparation, characterization and dielectric properties of Ba3−xSrxLiM3Ti5O21[M=Nb and Ta, x=0 to 3] ceramics [Elektronische Daten] [T. Dhanya, P. Simna, R. Ratheesh] The ceramic compositions Ba3−xSrxLiM3Ti5O21[M=Nb and Ta, x=0 to 3] were prepared through conventional solid state ceramic route. A detailed study has been carried out to correlate the structure of Ba3−xSrxLiM3Ti5O21[M=Nb and Ta, x=0 to 3] with respect to their dielectric properties. The structure and microstructure of ceramic samples were studied using powder X-ray diffractometer and Scanning Electron Microscopic techniques. The dielectric properties of the sintered ceramic compacts have been studied. The Ba-rich compositions were identified as promising candidates for high frequency applications whereas the Sr-rich compositions were excellent ionic conductors and can be commercially exploited for applications in solid-state batteries. Springer Science+Business Media, LLC, 2010 Dhanya T. Microwave Materials Division, Centre for Materials for Electronics Technology (C-MET), Department of Information Technology, Government of India, Athani P.O, 680 771, Thrissur, Kerala, India aut Simna P. Microwave Materials Division, Centre for Materials for Electronics Technology (C-MET), Department of Information Technology, Government of India, Athani P.O, 680 771, Thrissur, Kerala, India aut Ratheesh R. Microwave Materials Division, Centre for Materials for Electronics Technology (C-MET), Department of Information Technology, Government of India, Athani P.O, 680 771, Thrissur, Kerala, India aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/8(2011-08-01), 974-977 0957-4522 22:8<974 2011 22 10854 https://doi.org/10.1007/s10854-010-0246-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0246-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Dhanya T. Microwave Materials Division, Centre for Materials for Electronics Technology (C-MET), Department of Information Technology, Government of India, Athani P.O, 680 771, Thrissur, Kerala, India aut NATIONALLICENCE 700 1- Simna P. Microwave Materials Division, Centre for Materials for Electronics Technology (C-MET), Department of Information Technology, Government of India, Athani P.O, 680 771, Thrissur, Kerala, India aut NATIONALLICENCE 700 1- Ratheesh R. Microwave Materials Division, Centre for Materials for Electronics Technology (C-MET), Department of Information Technology, Government of India, Athani P.O, 680 771, Thrissur, Kerala, India aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/8(2011-08-01), 974-977 0957-4522 22:8<974 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer