caa a22 4500 445828684 CHVBK 20180317145307.0 cr unu---uuuuu 170323e20110501xx s 000 0 eng 10.1007/s10854-010-0175-y doi (NATIONALLICENCE)springer-10.1007/s10854-010-0175-y Structural and optical properties of Ag2SeTe nano thin films prepared by thermal evaporation [Elektronische Daten] [C. Vijayan, M. Pandiaraman, N. Soundararajan, R. Chandramohan, V. Dhanasekaran, K. Sundaram, T. Mahalingam, A. John Peter] Semiconducting Ag2SeTe thin films were prepared with different thicknesses onto glass substrates at room temperature using thermal evaporation technique. The structural properties were determined as a function of thickness by XRD exhibiting no preferential orientation along any plane, however the films are found to have peaks corresponding to mixed phase. The XRD studies were used to calculate the crystallite size and microstrain of the Ag2SeTe films. The calculated microstructure parameters reveal that the crystallite size increases and micro strain decreases with increasing film thickness. The refractive index, dielectric constants and thereby the optical bandgap of the films were calculated from transmittance spectral data recorded in the range 400-1200nm by UV-VIS-Spectrometer. The direct optical bandgap of the Ag2SeTe thin films deposited on glass substrates with different thicknesses 50-230nm were found to be in the range 1.48-1.59eV. The carrier density value is estimated to be around 9.8×1021cm−1 for the film thickness of 150nm. The compositions estimated from the optical band gap studies reveal a value of 0.75 for Tellurium concentration. These structural and optical parameters are found to be very sensitive to the thin film thickness. Springer Science+Business Media, LLC, 2010 Vijayan C. Physics Department, N.M.S.S.Vellaichamynadar College, 625 019, Madurai, India aut Pandiaraman M. Thin Film Lab, Madurai Kamaraj University, 625 021, Madurai, India aut Soundararajan N. Thin Film Lab, Madurai Kamaraj University, 625 021, Madurai, India aut Chandramohan R. Department of Physics, Sree Sevugan Annamalai College, 630 303, Devakottai, India aut Dhanasekaran V. Department of Physics, Alagappa University, 630 003, Karaikudi, India aut Sundaram K. Department of Physics, Alagappa University, 630 003, Karaikudi, India aut Mahalingam T. Department of Physics, Alagappa University, 630 003, Karaikudi, India aut John Peter A. Physics Department, Government Arts and Science College, 625 106, Melur, India aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/5(2011-05-01), 545-550 0957-4522 22:5<545 2011 22 10854 https://doi.org/10.1007/s10854-010-0175-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0175-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Vijayan C. Physics Department, N.M.S.S.Vellaichamynadar College, 625 019, Madurai, India aut NATIONALLICENCE 700 1- Pandiaraman M. Thin Film Lab, Madurai Kamaraj University, 625 021, Madurai, India aut NATIONALLICENCE 700 1- Soundararajan N. Thin Film Lab, Madurai Kamaraj University, 625 021, Madurai, India aut NATIONALLICENCE 700 1- Chandramohan R. Department of Physics, Sree Sevugan Annamalai College, 630 303, Devakottai, India aut NATIONALLICENCE 700 1- Dhanasekaran V. Department of Physics, Alagappa University, 630 003, Karaikudi, India aut NATIONALLICENCE 700 1- Sundaram K. Department of Physics, Alagappa University, 630 003, Karaikudi, India aut NATIONALLICENCE 700 1- Mahalingam T. Department of Physics, Alagappa University, 630 003, Karaikudi, India aut NATIONALLICENCE 700 1- John Peter A. Physics Department, Government Arts and Science College, 625 106, Melur, India aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/5(2011-05-01), 545-550 0957-4522 22:5<545 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer