caa a22 4500 445828706 CHVBK 20180317145307.0 cr unu---uuuuu 170323e20110501xx s 000 0 eng 10.1007/s10854-010-0169-9 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0169-9 Preparation of Eu3+-Y3+ co-doping red-emitting phosphors for white-light emitting diodes (W-LEDs) application and investigation of their optical characteristics [Elektronische Daten] [Fa-bin Cao, Yan-wen Tian, Liao-sha Li, Yong-jie Chen, Lin-jiu Xiao] Eu3+-Y3+ co-doping Ca0.54Sr0.34−1.5x Eu0.08Yx(MoO4)y(WO4)1−y (x=0.01, 0.02, 0.04, 0.06, 0.08, 0.10, 0.12, 0.14, 0.16, 0.18, 0.20. y=0, 0.1, 0.2, 0.4, 0.6, 0.8, 1.0), have been prepared and their luminescent properties are investigated to seek a new red-emitting phosphor for ultraviolet-light emitting diodes chips. In absorption efficiency, luminescent intensity and chromaticity coordinates, Ca0.54Sr0.22(MoO4)0.2(WO4)0.8:0.08Eu3+, 0.08Y3+ phosphor is better than commercial Y2O2S:Eu3+ phosphor excited by 390-405nm light emitting diodes chip. The Author(s), 2010 Cao Fa-bin Anhui Provincial Key Laboratory for Metallurgical Engineering & Resources Recyling, Anhui University of Technology, 243002, Maanshan, Anhui, People's Republic of China aut Tian Yan-wen School of Materials and Metallurgy, Northeastern University, 110004, Shenyang, People's Republic of China aut Li Liao-sha Anhui Provincial Key Laboratory for Metallurgical Engineering & Resources Recyling, Anhui University of Technology, 243002, Maanshan, Anhui, People's Republic of China aut Chen Yong-jie School of Chemical Engineering, Shenyang Institute of Chemical Technology, 110142, Shenyang, People's Republic of China aut Xiao Lin-jiu School of Chemical Engineering, Shenyang Institute of Chemical Technology, 110142, Shenyang, People's Republic of China aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/5(2011-05-01), 510-514 0957-4522 22:5<510 2011 22 10854 https://doi.org/10.1007/s10854-010-0169-9 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0169-9 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Cao Fa-bin Anhui Provincial Key Laboratory for Metallurgical Engineering & Resources Recyling, Anhui University of Technology, 243002, Maanshan, Anhui, People's Republic of China aut NATIONALLICENCE 700 1- Tian Yan-wen School of Materials and Metallurgy, Northeastern University, 110004, Shenyang, People's Republic of China aut NATIONALLICENCE 700 1- Li Liao-sha Anhui Provincial Key Laboratory for Metallurgical Engineering & Resources Recyling, Anhui University of Technology, 243002, Maanshan, Anhui, People's Republic of China aut NATIONALLICENCE 700 1- Chen Yong-jie School of Chemical Engineering, Shenyang Institute of Chemical Technology, 110142, Shenyang, People's Republic of China aut NATIONALLICENCE 700 1- Xiao Lin-jiu School of Chemical Engineering, Shenyang Institute of Chemical Technology, 110142, Shenyang, People's Republic of China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/5(2011-05-01), 510-514 0957-4522 22:5<510 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer