caa a22 4500 445828730 CHVBK 20180317145307.0 cr unu---uuuuu 170323e20110501xx s 000 0 eng 10.1007/s10854-010-0178-8 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0178-8 Improvement in the dielectric properties of Ba6−3 x (Nd0.4Bi0.6)8+2 x Ti18O54( x =1-1.5) ceramics by LiBSi/BaLiF glass additives [Elektronische Daten] [Yonggang Zhang, Shunhua Wu, Shunqi Gao, Xuesong Wei] To develop low-temperature-fired Ba6−3x (Nd0.4Bi0.6)8+2x Ti18O54(x=1-1.5, abbreviated as BNBT)-based ceramics, the effects of two kinds of glasses (LiBSi and BaLiF) addition on both the phase structure and dielectric properties of BNBT were investigated. The results indicate that LiBSi and BaLiF glasses can effectively wet the BNBT grain and be used as sintering aids to reduce the sintering temperature from 1,200 to 850°C without the formation of additional phases. With the addition of 14.38wt.% LiBSi and 1wt.% BaLiF, the ceramics sintered at 850°C show favorable dielectric properties of εr=55, tanδ=0.00254. Springer Science+Business Media, LLC, 2010 Zhang Yonggang Institute of Electronics and Information Engineering, Tianjin University, 300072, Tianjin, China aut Wu Shunhua Institute of Electronics and Information Engineering, Tianjin University, 300072, Tianjin, China aut Gao Shunqi Institute of Electronics and Information Engineering, Tianjin University, 300072, Tianjin, China aut Wei Xuesong Institute of Electronics and Information Engineering, Tianjin University, 300072, Tianjin, China aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/5(2011-05-01), 561-564 0957-4522 22:5<561 2011 22 10854 https://doi.org/10.1007/s10854-010-0178-8 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0178-8 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Zhang Yonggang Institute of Electronics and Information Engineering, Tianjin University, 300072, Tianjin, China aut NATIONALLICENCE 700 1- Wu Shunhua Institute of Electronics and Information Engineering, Tianjin University, 300072, Tianjin, China aut NATIONALLICENCE 700 1- Gao Shunqi Institute of Electronics and Information Engineering, Tianjin University, 300072, Tianjin, China aut NATIONALLICENCE 700 1- Wei Xuesong Institute of Electronics and Information Engineering, Tianjin University, 300072, Tianjin, China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/5(2011-05-01), 561-564 0957-4522 22:5<561 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer