caa a22 4500 445828773 CHVBK 20180317145307.0 cr unu---uuuuu 170323e20110501xx s 000 0 eng 10.1007/s10854-010-0158-z doi (NATIONALLICENCE)springer-10.1007/s10854-010-0158-z Preparation of the LTCC composite ceramics with low permittivity [Elektronische Daten] [Song Chen, Shuren Zhang, Xiaohua Zhou, Ting Zhang] In this work, the LTCC composite ceramics containing α-alumina and quartz based on the binary system BaO-B2O3 were prepared by traditional solid-state preparation process at a sintering temperature of 900°C. Sintering mechanism and physical properties of the LTCC composite ceramics are investigated and discussed in detail in terms of their mineral phase composition. The results indicate that, by the chemical combination of barium hydroxide octahydrate and an aqueous solution of boric acid, a barium borate phase can be formed form the binary system BaO-B2O3 and consequently supply a liquid sintering aid for the fabrication of LTCC composite ceramics at a sintering temperature of 900°C. The introduction of α-alumina to the binary system BaO-B2O3 can improve the sintering behavior whereas the presence of quartz in the composite ceramics is important to achieve low permittivity. By the combination of α-alumina, quartz and BaO-B2O3 composition, the dense LTCC composite ceramics, which is characterized by excellent dielectric properties (permittivity: 3.56; 4.83; dielectric loss: 3×10−4; 4×10−4), can be fabricated availably. Springer Science+Business Media, LLC, 2010 Chen Song School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut Zhang Shuren School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut Zhou Xiaohua School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut Zhang Ting School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/5(2011-05-01), 453-457 0957-4522 22:5<453 2011 22 10854 https://doi.org/10.1007/s10854-010-0158-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0158-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Chen Song School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut NATIONALLICENCE 700 1- Zhang Shuren School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut NATIONALLICENCE 700 1- Zhou Xiaohua School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut NATIONALLICENCE 700 1- Zhang Ting School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, People's Republic of China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/5(2011-05-01), 453-457 0957-4522 22:5<453 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer