caa a22 4500 44582882X CHVBK 20180317145307.0 cr unu---uuuuu 170323e20110501xx s 000 0 eng 10.1007/s10854-010-0167-y doi (NATIONALLICENCE)springer-10.1007/s10854-010-0167-y Optical and electrical properties of Bi doped ZnO thin films deposited by ultrasonic spray pyrolysis [Elektronische Daten] [F. Chouikh, Y. Beggah, M. Aida] Undoped Zinc oxide (ZnO) and Bismuth doped zinc oxide (ZBO) thin films have been prepared by a simple and inexpensive technique namely ultrasonic spray pyrolysis. Films were prepared from an aqueous solution of zinc acetate on glass and silicon substrates at temperature of 350°C. Doping is achieved by adding a small amount of Bi(NO3), H2O salt to the starting solution which is mixed thoroughly prior to spraying. The goal of this work is to study the influence of doping (Bi) with different concentrations on the structural, optical, and electrical properties of Bi doped ZnO films. Structural analysis shows that the ZBO layers are polycrystalline with a wurtzite structure and (100) preferential orientation which disappears gradually with increasing doping concentration. The optical transmittance average of all films, regardless the doping concentration, was higher than 80% in the visible range. The obtained films gaps values vary in the range from 3.19 to 3.24eV and the Urbach energy lies in the range 11 to 530meV. The measured conductivity, in dark and at room temperature, varies with four order of decade level (from 10−3 to 10+1 (Ωcm)−1)with increasing Bi doping level. Springer Science+Business Media, LLC, 2010 Chouikh F. Laboratory of Materials Study LEM, Faculty of Science and Technology, University of Jijel, 18000, Jijel, Algeria aut Beggah Y. Laboratory of Materials Study LEM, Faculty of Science and Technology, University of Jijel, 18000, Jijel, Algeria aut Aida M. Department of Physics, Laboratory of Thin Films and Interface, Faculty of Science, University Mentouri of Constantine, 25000, Constantine, Algeria aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/5(2011-05-01), 499-505 0957-4522 22:5<499 2011 22 10854 https://doi.org/10.1007/s10854-010-0167-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0167-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Chouikh F. Laboratory of Materials Study LEM, Faculty of Science and Technology, University of Jijel, 18000, Jijel, Algeria aut NATIONALLICENCE 700 1- Beggah Y. Laboratory of Materials Study LEM, Faculty of Science and Technology, University of Jijel, 18000, Jijel, Algeria aut NATIONALLICENCE 700 1- Aida M. Department of Physics, Laboratory of Thin Films and Interface, Faculty of Science, University Mentouri of Constantine, 25000, Constantine, Algeria aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/5(2011-05-01), 499-505 0957-4522 22:5<499 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer