caa a22 4500 445828935 CHVBK 20180317145308.0 cr unu---uuuuu 170323e20110201xx s 000 0 eng 10.1007/s10854-010-0103-1 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0103-1 Oxidation of sputtered Zr thin film on Si substrate [Elektronische Daten] [Tedi Kurniawan, Kuan Cheong, Khairunisak Razak, Zainovia Lockman, Nuruddin Ahmad] Oxidation of sputtered Zr thin film on Si substrate has been investigated by varying oxidation times (5-60min) at 500°C. Fourier transform infrared spectroscopy indicated the existence of ZrO2 by showing spectra of Zr-O. Vibration mode of Si-O and Zr-O-Si are also detected for all samples oxidized at different duration. This suggested the existence of SiOx and ZrxSiyOz compounds and they might be located at interfacial layers (ILs) between ZrO2 and Si. Cross-sectional image of high resolution transmission electron microscopy taken from 60-min oxidized sample showed that both ZrO2 and IL thickness is ~3.5nm. Time-of-flight secondary-ion-mass spectroscopy suggested that ZrxSiyOz may be formed after oxidized for 15min. The proposed IL is consisted of a mixture of ZrxSiyOz and SiOx. A physical model has been established to explain the observation. Electrical characterization shows that capacitance-voltage curves have small hysteresis and their flatband voltages are shifted to a negative bias. Effective dielectric constant values of the investigated oxides are in the range of 4.22-5.29. Leakage current density-breakdown voltage characteristic shows that 5-min oxidized sample has the lowest dielectric breakdown voltage if compared with the other samples. Springer Science+Business Media, LLC, 2010 Kurniawan Tedi Energy Efficient and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Nibong Tebal, 14300, Pulau Pinang, Malaysia aut Cheong Kuan Energy Efficient and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Nibong Tebal, 14300, Pulau Pinang, Malaysia aut Razak Khairunisak Energy Efficient and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Nibong Tebal, 14300, Pulau Pinang, Malaysia aut Lockman Zainovia Energy Efficient and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Nibong Tebal, 14300, Pulau Pinang, Malaysia aut Ahmad Nuruddin Faculty of Industrial Technology, Institute of Technology Bandung, Labtek VI, Jl.Ganehsa No.10, 40132, Bandung, Indonesia aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/2(2011-02-01), 143-150 0957-4522 22:2<143 2011 22 10854 https://doi.org/10.1007/s10854-010-0103-1 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0103-1 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kurniawan Tedi Energy Efficient and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Nibong Tebal, 14300, Pulau Pinang, Malaysia aut NATIONALLICENCE 700 1- Cheong Kuan Energy Efficient and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Nibong Tebal, 14300, Pulau Pinang, Malaysia aut NATIONALLICENCE 700 1- Razak Khairunisak Energy Efficient and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Nibong Tebal, 14300, Pulau Pinang, Malaysia aut NATIONALLICENCE 700 1- Lockman Zainovia Energy Efficient and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Nibong Tebal, 14300, Pulau Pinang, Malaysia aut NATIONALLICENCE 700 1- Ahmad Nuruddin Faculty of Industrial Technology, Institute of Technology Bandung, Labtek VI, Jl.Ganehsa No.10, 40132, Bandung, Indonesia aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/2(2011-02-01), 143-150 0957-4522 22:2<143 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer