caa a22 4500 445828943 CHVBK 20180317145308.0 cr unu---uuuuu 170323e20110201xx s 000 0 eng 10.1007/s10854-010-0106-y doi (NATIONALLICENCE)springer-10.1007/s10854-010-0106-y Analysis of critical doping level of sprayed antimony doped tin oxide films [Elektronische Daten] [K. Ravichandran, P. Philominathan] Antimony doped tin oxide films are fabricated using a simplified and inexpensive spray pyrolysis technique. The variation in the sheet resistance, as a function of Sb/Sn ratio in the spraying solution, is studied. The sheet resistance decreases with the increase in doping level, attains a minimum at a particular doping level and increases with further doping. This critical value of the doping ratio (Sb/Sncritical), at which the transition takes place, is found to be 2.5 at.%, when the concentration of the precursor solution is 0.8M and 4.5 at.% when the concentration is 0.4M. The reason for this variation is analyzed with the support of the Sb/Sncritical values, obtained by various researchers. This Sb/Sncritical is found to depend mainly on the carrier concentration of the films. Springer Science+Business Media, LLC, 2010 Ravichandran K. P.G. and Research Department of Physics, AVVM Sri Pushpam College, 613503, Poondi, Thanjavur District, Tamil Nadu, India aut Philominathan P. P.G. and Research Department of Physics, AVVM Sri Pushpam College, 613503, Poondi, Thanjavur District, Tamil Nadu, India aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/2(2011-02-01), 158-161 0957-4522 22:2<158 2011 22 10854 https://doi.org/10.1007/s10854-010-0106-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0106-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Ravichandran K. P.G. and Research Department of Physics, AVVM Sri Pushpam College, 613503, Poondi, Thanjavur District, Tamil Nadu, India aut NATIONALLICENCE 700 1- Philominathan P. P.G. and Research Department of Physics, AVVM Sri Pushpam College, 613503, Poondi, Thanjavur District, Tamil Nadu, India aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/2(2011-02-01), 158-161 0957-4522 22:2<158 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer