caa a22 4500 445829001 CHVBK 20180317145308.0 cr unu---uuuuu 170323e20110201xx s 000 0 eng 10.1007/s10854-010-0113-z doi (NATIONALLICENCE)springer-10.1007/s10854-010-0113-z Interfacial reaction between Au and Sn films electroplated for LED bumps [Elektronische Daten] [M. Huang, Y. Liu, J. Gao] Au-20wt% Sn eutectic solder is used as bumps in flip chip package of power LED (Light Emitting Diode) due to its excellent properties. The Au/Sn dual-layer films were fabricated on Si wafer by pulse electroplating of Au and Sn sequentially, and the solid-solid interfacial reaction during aging and the eutectic reaction during reflow soldering were investigated in the present work. After storage at room temperature for 1week, three phases of AuSn, AuSn2 and AuSn4 were sequentially formed at the Au/Sn (10μm/10μm) interface, and the thickness of this reaction region was about 5μm. Firstly, AuSn4 was formed at the Au/Sn interface, and then AuSn and AuSn2 were formed at the Au/AuSn4 interface. After aging at 150°C for 5 and 10h, a similar layered structure of AuSn/AuSn2/AuSn4 was also observed. Due to the faster diffusion of Au to Sn layer, all the Sn elements were consumed after aging at 150°C for 15h and AuSn4 layer gradually transformed into AuSn and AuSn2 layers. For the specimen of Au/Sn (9μm/6μm) films on Si chip, a bamboo-shoot-like microstructure of Au5Sn/AuSn/AuSn2 was formed in the reaction region after reflowed at 280°C for 10s; while a typical two-phase (Au5Sn and AuSn) eutectic microstructure was formed after reflowed at 280°C for 60s. Springer Science+Business Media, LLC, 2010 Huang M. Electronic Packaging Materials Laboratory, School of Materials Science & Engineering, Dalian University of Technology, 116024, Dalian, China aut Liu Y. Electronic Packaging Materials Laboratory, School of Materials Science & Engineering, Dalian University of Technology, 116024, Dalian, China aut Gao J. Electronic Packaging Materials Laboratory, School of Materials Science & Engineering, Dalian University of Technology, 116024, Dalian, China aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/2(2011-02-01), 193-199 0957-4522 22:2<193 2011 22 10854 https://doi.org/10.1007/s10854-010-0113-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0113-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Huang M. Electronic Packaging Materials Laboratory, School of Materials Science & Engineering, Dalian University of Technology, 116024, Dalian, China aut NATIONALLICENCE 700 1- Liu Y. Electronic Packaging Materials Laboratory, School of Materials Science & Engineering, Dalian University of Technology, 116024, Dalian, China aut NATIONALLICENCE 700 1- Gao J. Electronic Packaging Materials Laboratory, School of Materials Science & Engineering, Dalian University of Technology, 116024, Dalian, China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/2(2011-02-01), 193-199 0957-4522 22:2<193 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer