caa a22 4500 445829052 CHVBK 20180317145308.0 cr unu---uuuuu 170323e20110201xx s 000 0 eng 10.1007/s10854-010-0097-8 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0097-8 Preparation of La2NiMnO6 thin films on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition [Elektronische Daten] [Yi Tian, Wei Zhang, Lei Li, Yi Lin, Xiang Chen] Double perovskite La2NiMnO6 thin films were prepared on Pt/TiO2/SiO2/Si substrates by the pulsed laser deposition process, and the crystal structure and microstructures were investigated. The temperature and the oxygen pressure played the primary roles dominating the crystallization behavior and the morphology of La2NiMnO6 thin films. The well crystallized La2NiMnO6 thin films could be obtained at 873 and 923K under all oxygen pressures investigated here, and the fine morphology was obtained under the oxygen pressures equal to or higher than 50 and 100Pa, respectively, while phase constitution was significantly affected by the oxygen pressure for La2NiMnO6 thin films prepared at 1,023K where the higher oxygen pressure led to the appearance of some secondary phase. Springer Science+Business Media, LLC, 2010 Tian Yi Laboratory of Dielectric Materials, Department of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China aut Zhang Wei Laboratory of Dielectric Materials, Department of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China aut Li Lei Laboratory of Dielectric Materials, Department of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China aut Lin Yi Laboratory of Dielectric Materials, Department of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China aut Chen Xiang Laboratory of Dielectric Materials, Department of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/2(2011-02-01), 116-119 0957-4522 22:2<116 2011 22 10854 https://doi.org/10.1007/s10854-010-0097-8 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0097-8 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Tian Yi Laboratory of Dielectric Materials, Department of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China aut NATIONALLICENCE 700 1- Zhang Wei Laboratory of Dielectric Materials, Department of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China aut NATIONALLICENCE 700 1- Li Lei Laboratory of Dielectric Materials, Department of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China aut NATIONALLICENCE 700 1- Lin Yi Laboratory of Dielectric Materials, Department of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China aut NATIONALLICENCE 700 1- Chen Xiang Laboratory of Dielectric Materials, Department of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/2(2011-02-01), 116-119 0957-4522 22:2<116 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer