caa a22 4500 445829060 CHVBK 20180317145308.0 cr unu---uuuuu 170323e20111101xx s 000 0 eng 10.1007/s10854-011-0347-4 doi (NATIONALLICENCE)springer-10.1007/s10854-011-0347-4 Excimer laser crystallization of InGaZnO4 on SiO2 substrate [Elektronische Daten] [Tao Chen, Meng-Yue Wu, Ryoichi Ishihara, Kenji Nomura, Toshio Kamiya, Hideo Hosono, C. M Beenakker] In this paper, we were able to crystallize InGaZnO4 (IGZO) by excimer laser on SiO2 substrate. It was observed that uniform [0001] textured polycrystalline IGZO film has been obtained without any grain boundaries and oxygen vacancies on SiO2 substrate. This process is very promising in fabricating high quality IGZO thin film transistors (TFT) at low temperature without seed substrate. The Author(s), 2011 Chen Tao Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microsystems and Nanoelectronics Technology (DIMES), Delft University of Technology, Feldmannweg 17, 2628CT, Delft, The Netherlands aut Wu Meng-Yue Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microsystems and Nanoelectronics Technology (DIMES), Delft University of Technology, Feldmannweg 17, 2628CT, Delft, The Netherlands aut Ishihara Ryoichi Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microsystems and Nanoelectronics Technology (DIMES), Delft University of Technology, Feldmannweg 17, 2628CT, Delft, The Netherlands aut Nomura Kenji Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microsystems and Nanoelectronics Technology (DIMES), Delft University of Technology, Feldmannweg 17, 2628CT, Delft, The Netherlands aut Kamiya Toshio Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microsystems and Nanoelectronics Technology (DIMES), Delft University of Technology, Feldmannweg 17, 2628CT, Delft, The Netherlands aut Hosono Hideo Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microsystems and Nanoelectronics Technology (DIMES), Delft University of Technology, Feldmannweg 17, 2628CT, Delft, The Netherlands aut M Beenakker C. Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microsystems and Nanoelectronics Technology (DIMES), Delft University of Technology, Feldmannweg 17, 2628CT, Delft, The Netherlands aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/11(2011-11-01), 1694-1696 0957-4522 22:11<1694 2011 22 10854 https://doi.org/10.1007/s10854-011-0347-4 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-011-0347-4 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Chen Tao Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microsystems and Nanoelectronics Technology (DIMES), Delft University of Technology, Feldmannweg 17, 2628CT, Delft, The Netherlands aut NATIONALLICENCE 700 1- Wu Meng-Yue Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microsystems and Nanoelectronics Technology (DIMES), Delft University of Technology, Feldmannweg 17, 2628CT, Delft, The Netherlands aut NATIONALLICENCE 700 1- Ishihara Ryoichi Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microsystems and Nanoelectronics Technology (DIMES), Delft University of Technology, Feldmannweg 17, 2628CT, Delft, The Netherlands aut NATIONALLICENCE 700 1- Nomura Kenji Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microsystems and Nanoelectronics Technology (DIMES), Delft University of Technology, Feldmannweg 17, 2628CT, Delft, The Netherlands aut NATIONALLICENCE 700 1- Kamiya Toshio Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microsystems and Nanoelectronics Technology (DIMES), Delft University of Technology, Feldmannweg 17, 2628CT, Delft, The Netherlands aut NATIONALLICENCE 700 1- Hosono Hideo Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microsystems and Nanoelectronics Technology (DIMES), Delft University of Technology, Feldmannweg 17, 2628CT, Delft, The Netherlands aut NATIONALLICENCE 700 1- M Beenakker C. Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microsystems and Nanoelectronics Technology (DIMES), Delft University of Technology, Feldmannweg 17, 2628CT, Delft, The Netherlands aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/11(2011-11-01), 1694-1696 0957-4522 22:11<1694 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer