caa a22 4500 445829117 CHVBK 20180317145308.0 cr unu---uuuuu 170323e20111101xx s 000 0 eng 10.1007/s10854-011-0352-7 doi (NATIONALLICENCE)springer-10.1007/s10854-011-0352-7 An efficient novel low voltage field electron emitter with cathode consisting of template synthesized copper microarrays [Elektronische Daten] [G. Sekhon, Sunil Kumar, Charanjit Kaur, N. Verma, Chung-Hsin Lu, S. Chakarvarti] Synthesis of copper microstructures was done using the electrochemical template technique using the NTF (Nuclear Track Filter). The NTF was fabricated using the polycarbonate SSNTD (Solid State Nuclear Track Detector) which was created by irradiation of Uranium ions. The synthesized copper microstructures were further used to fabricate a novel low voltage field electron emitter. As compared to traditional technique of lithography-based nano/micro fabrication, template synthesis is a simple technique, where pores of NTFs are used as templates and by using a suitable electrochemical cell design, any type of nano/microstructures can be fabricated. The present paper envisages the production of nuclear track filters and fabrication of copper microstructures through galvanic replication. The studies also reports first time, a excellent low voltage field electron emitter fabricated by using copper microstructures in comparison to the earlier work. This low voltage field electron emitter being a novel cold cathode emitter can be a potential candidate for an energy saving devices. Springer Science+Business Media, LLC, 2011 Sekhon G. Department of Physics, Government of Mohindra College, 147001, Patiala, Punjab, India aut Kumar Sunil Department of Physics, Maharishi Markandeshwar University, 133 207, Mullana(Ambala), Haryana, India aut Kaur Charanjit Government College of Education, 147001, Patiala, Punjab, India aut Verma N. School of Physics and Materials Science, Thapar University, 147004, Patiala, Punjab, India aut Lu Chung-Hsin Department of Chemical Engineering, National Taiwan University, 10617, Taipei, Taiwan, ROC aut Chakarvarti S. Manav Rachna International University, Faridabad, Haryana, India aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/11(2011-11-01), 1725-1729 0957-4522 22:11<1725 2011 22 10854 https://doi.org/10.1007/s10854-011-0352-7 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-011-0352-7 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Sekhon G. Department of Physics, Government of Mohindra College, 147001, Patiala, Punjab, India aut NATIONALLICENCE 700 1- Kumar Sunil Department of Physics, Maharishi Markandeshwar University, 133 207, Mullana(Ambala), Haryana, India aut NATIONALLICENCE 700 1- Kaur Charanjit Government College of Education, 147001, Patiala, Punjab, India aut NATIONALLICENCE 700 1- Verma N. School of Physics and Materials Science, Thapar University, 147004, Patiala, Punjab, India aut NATIONALLICENCE 700 1- Lu Chung-Hsin Department of Chemical Engineering, National Taiwan University, 10617, Taipei, Taiwan, ROC aut NATIONALLICENCE 700 1- Chakarvarti S. Manav Rachna International University, Faridabad, Haryana, India aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/11(2011-11-01), 1725-1729 0957-4522 22:11<1725 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer